硅基恒流二极管的设计
发布时间：2018-09-12 07:28
【摘要】：作为地壳中储量最大的半导体材料,硅材料具有良好的半导体特性,广泛应用于电子信息等领域。硅分立器件,作为一种半导体器件领域的重要组成部分,在汽车电子、工业自动化与3G通信等方面具有重要的应用意义,并且目前其工艺技术成熟、器件可靠性高、生产成本低。而作为硅分立器件家族中的一员,硅恒流二极管的恒流特性好、价格低、使用简便,可提供稳定的电流输出,是实现各种电子设备的恒流源、稳压源及保护电路的重要器件之一。然而,由于目前的恒流二极管存在起始电压大、恒流区域窄、动态阻抗小等问题,因此其应用范围受到了一定限制。 本文基于恒流二极管的应用背景和价值,综述了国内外这一领域的发展现状。根据恒流二极管的工作原理,结合半导体物理和半导体器件物理基础知识,结合器件设计要求,初步设计了器件的结构参数。利用数值模拟方程和器件物理模型,通过数值模拟方法模拟出该器件的I-V特性曲线,与设计要求进行对比并分析原因。然后通过对一些器件结构参数,如沟道掺杂浓度、沟道宽度、沟道长度、栅漏间距等进行优化,改善了初始设计的恒流二极管的恒流特性,恒定电流由5.5×10-6A提高到了6.7×10-6A,击穿电压由35V提高到了54V。为降低PN结边缘的尖峰电场,本文又将场板技术应用于优化后的结构,结果发现恒流二极管的击穿电压由54V提高到60V,提高幅度高达1O%。接着,本文又模拟并分析了加场板结构的电流温度系数、动态阻抗等特性,电流温度系数为-0.26%/℃,动态阻抗为60KΩ。最后,本文给出器件的工艺流程及版图,并简要介绍了器件主要工艺。 研究结果表明,恒流二极管特性参数理论计算公式与器件的实际特性较为符合。恒流二极管的各项参数,如起始电压、恒定电流和击穿电压等,需要折中选取。场板结构的应用对恒流二极管的击穿特性有一定的改善作用。应用场板技术后的结构恒流特性较好且恒流值大,恒流区域宽,起始电压小,击穿电压较同类型产品大,适用于高精度、大电流领域应用。
[Abstract]:As the largest semiconductor material in the earth's crust, silicon has good semiconductor properties and is widely used in electronic information and other fields. Silicon discrete devices, as an important part of semiconductor devices, have important application significance in automotive electronics, industrial automation and 3G communication. Low production cost. As a member of the silicon discrete device family, silicon constant-current diode has good constant-current characteristic, low price, easy to use, and can provide stable current output. It is a constant current source for various electronic devices. One of the important devices of voltage regulator and protection circuit. However, the current constant-current diodes have some problems, such as large initial voltage, narrow constant current region and small dynamic impedance, so their application scope is limited. Based on the application background and value of constant-current diodes, this paper summarizes the development of this field at home and abroad. According to the working principle of constant-current diode, combined with the basic knowledge of semiconductor physics and semiconductor device physics, combined with the device design requirements, the structure parameters of the device are preliminarily designed. The I-V characteristic curve of the device is simulated by the numerical simulation equation and the physical model of the device. The results are compared with the design requirements and the reasons are analyzed. Then, by optimizing some device structure parameters, such as channel doping concentration, channel width, channel length, gate leakage distance, etc., the constant current characteristics of the initial design constant current diode are improved. The constant current is increased from 5.5 脳 10 ~ (-6) A to 6.7 脳 10 ~ (-6) A, and the breakdown voltage is increased from 35 V to 54 V. In order to reduce the peak electric field at the edge of the PN junction, the field plate technique is applied to the optimized structure. It is found that the breakdown voltage of the constant current diode is increased from 54 V to 60 V, and the amplitude of the increase is as high as 1 O. Then, the current temperature coefficient and dynamic impedance of the structure are simulated and analyzed. The current temperature coefficient is -0.26 / 鈩，
本文编号：2238323
[Abstract]:As the largest semiconductor material in the earth's crust, silicon has good semiconductor properties and is widely used in electronic information and other fields. Silicon discrete devices, as an important part of semiconductor devices, have important application significance in automotive electronics, industrial automation and 3G communication. Low production cost. As a member of the silicon discrete device family, silicon constant-current diode has good constant-current characteristic, low price, easy to use, and can provide stable current output. It is a constant current source for various electronic devices. One of the important devices of voltage regulator and protection circuit. However, the current constant-current diodes have some problems, such as large initial voltage, narrow constant current region and small dynamic impedance, so their application scope is limited. Based on the application background and value of constant-current diodes, this paper summarizes the development of this field at home and abroad. According to the working principle of constant-current diode, combined with the basic knowledge of semiconductor physics and semiconductor device physics, combined with the device design requirements, the structure parameters of the device are preliminarily designed. The I-V characteristic curve of the device is simulated by the numerical simulation equation and the physical model of the device. The results are compared with the design requirements and the reasons are analyzed. Then, by optimizing some device structure parameters, such as channel doping concentration, channel width, channel length, gate leakage distance, etc., the constant current characteristics of the initial design constant current diode are improved. The constant current is increased from 5.5 脳 10 ~ (-6) A to 6.7 脳 10 ~ (-6) A, and the breakdown voltage is increased from 35 V to 54 V. In order to reduce the peak electric field at the edge of the PN junction, the field plate technique is applied to the optimized structure. It is found that the breakdown voltage of the constant current diode is increased from 54 V to 60 V, and the amplitude of the increase is as high as 1 O. Then, the current temperature coefficient and dynamic impedance of the structure are simulated and analyzed. The current temperature coefficient is -0.26 / 鈩，
本文编号：2238323
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