RF LDMOS功率晶体管的特性分析与模型研究
发布时间：2018-09-12 16:38
【摘要】：RF LDMOS(Radio Frequency Lateral Double Diffused Metal Oxide Silicon)以其增益高、线性好、输出功率大、稳定性好、价格低廉等优点成为通信基站,射频雷达中的首选器件。然而国内对于RF LDMOS功率晶体管的研究尚不成熟,本文基于国内研究现状开展了一款S波段工作的RF LDMOS器件的设计与研制。本文所设计的RF LDMOS晶体管源极采用Trench Sinker结构将LDMOS源极引到P型重掺杂衬底,双区LDD(Lightly Doped Drain)漂移区结构优化器件击穿电压和导通电阻,源极金属场板调制栅边缘电场、降低栅漏电容。基于此RF LDMOS器件的基本结构使用TCAD仿真工具Silvaco进行了工艺仿真。折衷优化了RF LDMOS的比导通电阻、栅氧可靠性和击穿电压,确定了器件的Pbody区注入剂量、移区长度、漂移区掺杂分布、金属场板长度、场板下方氧化层厚度等参数。根据仿真优化设计的的RF LDMOS器件结构进行了流片实验,器件击穿电压为76V,正向饱和电流密度225mA/mm。通过栅极的L型预匹配网络与漏极的T型预匹配网络,提升了器件的输入输出阻抗。封装后RF LDMOS的测试结果表明:在工作电压30V,2.7-3.1GHz工作频率下,漏极效率大于40%,输出功率大于100W,功率增益大于10dB,达到预期设计目标。最后,针对所研制的RF LDMOS晶体管开展了电路模型研究。一方面基于RF LDMOS小信号电路模型,使用COLD-FET法提取了器件的寄生参数,通过寄生参数剥离技术得到了LDMOS器件的本征元件参数,经过ADS仿真优化得到了更为精确的LDMOS小信号电路模型参数。另一方面,在小信号模型的基础上建立了RF LDMOS的大信号模型。其中LDMOS的非线性电流模型的建立以摩托罗拉的MET模型为基础并进行了适当改进,非线性电容模型的建立借鉴了传统的经验公式,模型的拟合结果显示所建立的大信号模型可以较准确的描述LDMOS器件的电流和电容。
[Abstract]:Because of its high gain, good linearity, high output power, good stability and low price, RF LDMOS (Radio Frequency Lateral Double Diffused Metal Oxide Silicon) has become the preferred device in radio frequency radar and communication base station. However, the research of RF LDMOS power transistors in China is not yet mature. In this paper, a S-band working RF LDMOS device is designed and developed based on the domestic research status. The RF LDMOS transistor source pole designed in this paper uses Trench Sinker structure to lead the LDMOS source pole to the P-type heavily doped substrate. The double-zone LDD (Lightly Doped Drain) drift region structure optimizes the breakdown voltage and on-resistance of the device, and the source electrode metal field plate modulates the edge electric field of the gate. Reduce gate leakage capacitance. The basic structure of the RF LDMOS device is simulated by TCAD simulation tool Silvaco. The specific on-resistance, gate oxygen reliability and breakdown voltage of RF LDMOS are optimized, and the parameters of Pbody region implantation dose, shift region length, drift region doping distribution, metal field plate length and oxide layer thickness under the field plate are determined. According to the optimized design of RF LDMOS device structure, the chip experiment is carried out. The breakdown voltage of the device is 76V, and the forward saturation current density is 225 Ma / mmm. The input and output impedance of the device is enhanced by the L-type prematching network of the gate and the T-type prematching network of the drain. The test results of the packaged RF LDMOS show that the drain efficiency is greater than 40, the output power is more than 100W, and the power gain is more than 10dB at the operating frequency of 30VL 2.7-3.1GHz, which achieves the expected design goal. Finally, the circuit model of the developed RF LDMOS transistor is studied. On the one hand, based on the RF LDMOS small-signal circuit model, the parasitic parameters of LDMOS devices are extracted by COLD-FET method, and the intrinsic component parameters of LDMOS devices are obtained by the parasitic parameter stripping technique. More accurate parameters of LDMOS small-signal circuit model are obtained by ADS simulation optimization. On the other hand, the large signal model of RF LDMOS is established on the basis of small signal model. The establishment of nonlinear current model of LDMOS is based on Motorola's MET model and is improved appropriately. The establishment of nonlinear capacitance model draws lessons from the traditional empirical formula. The fitting results show that the large signal model can accurately describe the current and capacitance of LDMOS devices.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN386
[Abstract]:Because of its high gain, good linearity, high output power, good stability and low price, RF LDMOS (Radio Frequency Lateral Double Diffused Metal Oxide Silicon) has become the preferred device in radio frequency radar and communication base station. However, the research of RF LDMOS power transistors in China is not yet mature. In this paper, a S-band working RF LDMOS device is designed and developed based on the domestic research status. The RF LDMOS transistor source pole designed in this paper uses Trench Sinker structure to lead the LDMOS source pole to the P-type heavily doped substrate. The double-zone LDD (Lightly Doped Drain) drift region structure optimizes the breakdown voltage and on-resistance of the device, and the source electrode metal field plate modulates the edge electric field of the gate. Reduce gate leakage capacitance. The basic structure of the RF LDMOS device is simulated by TCAD simulation tool Silvaco. The specific on-resistance, gate oxygen reliability and breakdown voltage of RF LDMOS are optimized, and the parameters of Pbody region implantation dose, shift region length, drift region doping distribution, metal field plate length and oxide layer thickness under the field plate are determined. According to the optimized design of RF LDMOS device structure, the chip experiment is carried out. The breakdown voltage of the device is 76V, and the forward saturation current density is 225 Ma / mmm. The input and output impedance of the device is enhanced by the L-type prematching network of the gate and the T-type prematching network of the drain. The test results of the packaged RF LDMOS show that the drain efficiency is greater than 40, the output power is more than 100W, and the power gain is more than 10dB at the operating frequency of 30VL 2.7-3.1GHz, which achieves the expected design goal. Finally, the circuit model of the developed RF LDMOS transistor is studied. On the one hand, based on the RF LDMOS small-signal circuit model, the parasitic parameters of LDMOS devices are extracted by COLD-FET method, and the intrinsic component parameters of LDMOS devices are obtained by the parasitic parameter stripping technique. More accurate parameters of LDMOS small-signal circuit model are obtained by ADS simulation optimization. On the other hand, the large signal model of RF LDMOS is established on the basis of small signal model. The establishment of nonlinear current model of LDMOS is based on Motorola's MET model and is improved appropriately. The establishment of nonlinear capacitance model draws lessons from the traditional empirical formula. The fitting results show that the large signal model can accurately describe the current and capacitance of LDMOS devices.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN386
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