一种基于绝缘体上Ge的碰撞电离晶体管
发布时间：2018-09-18 07:52
【摘要】：碰撞电离晶体管(IMOS)在高速、低功耗领域具有很好的应用前景。以优化传统IMOS的工作电压为目的,介绍了一种基于绝缘体上Ge的碰撞电离晶体管(GOI IMOS),利用Synopsys公司的ISE_TCAD对GOI IMOS的性能进行仿真分析与验证。结果表明,GOI IMOS相比于传统的绝缘体上Si的碰撞电离晶体管(SOI IMOS)可在更低的源漏偏压下工作,同时该器件能够实现大的开态电流与陡峭的亚阈值摆幅;另外,GOI IMOS的源漏偏压和栅长均对该器件阈值电压有较大的影响,p型GOI IMOS阈值电压的绝对值随着源漏电压和栅长的增大而减小。以上工作可为IMOS的设计、仿真、制备提供一定的理论指导。
[Abstract]:Collision ionization transistor (IMOS) has a good prospect in high speed and low power consumption. In order to optimize the operating voltage of traditional IMOS, a collision ionization transistor (GOI IMOS),) based on Ge on insulator is introduced. The performance of GOI IMOS is simulated and verified by Synopsys's ISE_TCAD. The results show that the collisional ionization transistor (SOI IMOS) of Si on the insulator can work at a lower source / drain bias voltage than that of the traditional Si on insulator, and the device can realize large on state current and steep subthreshold swing. In addition, both the source and drain bias voltage and gate length of GOI IMOS have great influence on the threshold voltage of the device. The absolute value of the threshold voltage of the p-type GOI IMOS decreases with the increase of the source drain voltage and the gate length. The above work can provide some theoretical guidance for the design, simulation and preparation of IMOS.
【作者单位】： 中国电子科技集团公司第十三研究所;西安科技大学电气与控制工程学院;
【分类号】：TN32
本文编号：2247260
[Abstract]:Collision ionization transistor (IMOS) has a good prospect in high speed and low power consumption. In order to optimize the operating voltage of traditional IMOS, a collision ionization transistor (GOI IMOS),) based on Ge on insulator is introduced. The performance of GOI IMOS is simulated and verified by Synopsys's ISE_TCAD. The results show that the collisional ionization transistor (SOI IMOS) of Si on the insulator can work at a lower source / drain bias voltage than that of the traditional Si on insulator, and the device can realize large on state current and steep subthreshold swing. In addition, both the source and drain bias voltage and gate length of GOI IMOS have great influence on the threshold voltage of the device. The absolute value of the threshold voltage of the p-type GOI IMOS decreases with the increase of the source drain voltage and the gate length. The above work can provide some theoretical guidance for the design, simulation and preparation of IMOS.
【作者单位】： 中国电子科技集团公司第十三研究所;西安科技大学电气与控制工程学院;
【分类号】：TN32
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