带过温保护的高精度带隙基准源的研究与设计
发布时间：2018-10-08 17:12
【摘要】：模拟集成电路和数模集成电路内部系统很多模块都需要参考电压和稳定的电流偏置,因此基准源电路广泛存在于这类系统内。基准源的设计指标包括温度系数要小,电源抑制比要高,与工艺角等参数的相关性小等。性能优异的基准源对于系统很多模块的功能实现具有重要的意义。基准源应用于许多类型的集成电路之中,比如DC-DC、AC-DC、以及A/D或D/A。这些产品的集成度都很高,工作频率也很高；因此要求基准源在保证精度的情况下,也要具有良好的电源抑制比能力、抗噪声能力。由于带隙基准源具有高电源抑制比(PSRR)和低温度系数等优良的特点,故其是目前各种基准源结构中运用最广泛的拓扑结构。由于系统的温度会随着负载的变化而变化,当系统温度过高时,系统要关闭以免系统温度过高。当系统温度高于设定的温度值时,会触发过温保护功能,同时会引发电阻分压的比例值发生变化,从而导致过温保护电路恢复正常的温度值与原来的温度值不同。在对比了多种基准源结构和温度补偿方案的基本上,本文在器件选择上和电路架构选择进行了研究。本文基于OKI 0.5μm BCD工艺,设计了一种带曲率补偿的低温漂带隙基准源,采用Brokaw带隙基准核心结构,引入一个高阶效应的电流对基准进行补偿；结合基准核心电路产生的无温度系数电压,利用简单的电路实现基准电流源的产生。运用Hspice对本文设计的电路进行仿真和验证,仿真结果表明：输出基准电压的温度系数仅为3.9ppm/℃,基准电流在-40℃～150℃温度范围内波动0.2%。在电源电压3V-6 V波动范围内,输出基准电压波动为562gV,输出基准电流波动为2.2nA,基准源在低颇下(10kHz以下)PSRR可达-76dB。从仿真数据中可以得到,本文设计的基准源的温性能得到了明显的提升,低频时的电源抑制比也很好,同时本文的结构也较简单,仿真时得到的建立时间也较短等特点。
[Abstract]:Many modules of analog and digital analog integrated circuits require reference voltage and stable current bias, so reference source circuits are widely used in these systems. The design indexes of the reference source include low temperature coefficient, high power supply rejection ratio and low correlation with parameters such as process angle and so on. The reference source with excellent performance is of great significance to the functional realization of many modules of the system. Reference sources are used in many types of integrated circuits, such as DC-DC,AC-DC, and A / R D or D / A. The integration of these products is very high and the working frequency is very high. Therefore, the reference source should have good power supply rejection ratio and anti-noise ability under the condition of ensuring accuracy. Bandgap reference is the most widely used topology in all kinds of reference sources because of its excellent characteristics such as high power rejection ratio (PSRR) and low temperature coefficient. Since the temperature of the system varies with the load, when the temperature of the system is too high, the system should be closed to avoid excessive temperature. When the temperature of the system is higher than the set temperature value, the function of over-temperature protection will be triggered, and the proportional value of resistance partial voltage will change at the same time, resulting in the recovery of the normal temperature value of the over-temperature protection circuit is different from the original temperature value. In comparison with various reference source structures and temperature compensation schemes, the device selection and circuit architecture selection are studied in this paper. Based on the OKI 0.5 渭 m BCD process, a low-temperature drift band gap reference source with curvature compensation is designed in this paper. The core structure of the Brokaw bandgap reference is adopted, and a high-order effect current is introduced to compensate the reference. Combined with the temperature-free voltage generated by the core circuit, a simple circuit is used to realize the generation of the reference current source. The circuit designed in this paper is simulated and verified by Hspice. The simulation results show that the temperature coefficient of the output reference voltage is only 3.9ppm/ 鈩，
本文编号：2257597
[Abstract]:Many modules of analog and digital analog integrated circuits require reference voltage and stable current bias, so reference source circuits are widely used in these systems. The design indexes of the reference source include low temperature coefficient, high power supply rejection ratio and low correlation with parameters such as process angle and so on. The reference source with excellent performance is of great significance to the functional realization of many modules of the system. Reference sources are used in many types of integrated circuits, such as DC-DC,AC-DC, and A / R D or D / A. The integration of these products is very high and the working frequency is very high. Therefore, the reference source should have good power supply rejection ratio and anti-noise ability under the condition of ensuring accuracy. Bandgap reference is the most widely used topology in all kinds of reference sources because of its excellent characteristics such as high power rejection ratio (PSRR) and low temperature coefficient. Since the temperature of the system varies with the load, when the temperature of the system is too high, the system should be closed to avoid excessive temperature. When the temperature of the system is higher than the set temperature value, the function of over-temperature protection will be triggered, and the proportional value of resistance partial voltage will change at the same time, resulting in the recovery of the normal temperature value of the over-temperature protection circuit is different from the original temperature value. In comparison with various reference source structures and temperature compensation schemes, the device selection and circuit architecture selection are studied in this paper. Based on the OKI 0.5 渭 m BCD process, a low-temperature drift band gap reference source with curvature compensation is designed in this paper. The core structure of the Brokaw bandgap reference is adopted, and a high-order effect current is introduced to compensate the reference. Combined with the temperature-free voltage generated by the core circuit, a simple circuit is used to realize the generation of the reference current source. The circuit designed in this paper is simulated and verified by Hspice. The simulation results show that the temperature coefficient of the output reference voltage is only 3.9ppm/ 鈩，
本文编号：2257597
本文链接：https://www.wllwen.com/kejilunwen/dianzigongchenglunwen/2257597.html
