Ag纳米粒子局域表面等离子体增强型ZnO量子点紫外光发射器件研究
发布时间：2018-10-08 20:15
【摘要】：直接带隙宽禁带(3.37eV)半导体ZnO材料具有高达60meV的激子束缚能,容易实现室温乃至更高温度下的高效激子发光,使其成为制备紫外光发射器件的理想候选材料。而相比于ZnO体材料,ZnO量子点(quantum dots,简称QDs)由于量子尺寸效应,致使其带隙展宽,发光蓝移,有望制得更加深紫外发射的ZnO量子点光发射器件。近年来,通过金属局域表面等离子体增强光发射器件发光效率方面的研究已逐渐受到大家的重视,而Ag纳米粒子局域表面等离子体由于其共振消光峰与ZnO材料的近带边激子发射峰存在一定重叠,因此较为适合应用于增强ZnO基紫外光发射器件的发光效率。本论文首先将溶胶凝胶法制得的ZnO量子点胶体溶液与AgNO3的乙醇溶液充分混合,一步制得ZnO量子点与Ag纳米粒子复合体系(ZD-Ag NPs),并将此复合体系应用于优化后的ZnO量子点紫外光发射器件中,提升了器件的ZnO近带边紫外光发射效率。具体实验内容如下:(1)通过溶胶凝胶法制得乙醇相中均匀分散的ZnO量子点胶体溶液,并对其相关物理特性进行了表征分析;随后将一定量的AgNO3乙醇溶液与之充分混合,在不需要其它任何外界条件参与的情况下,即可一步制得ZnO量子点与Ag纳米粒子复合体系,并可通过控制体系的反应时间从而调节Ag纳米粒子的消光峰位。(2)设计构建了p-GaN/ZnO QDs(30nm)/Al2O3/ZnO QDs(120nm)结构的ZnO量子点紫外光发射器件,并与p-GaN/ZnO QDs(150nm)结构的传统PN结型光发射器件进行对比研究。结果表明:我们所设计的ZnO量子点紫外光发射器件拥有更高的光发射效率和相对更强的ZnO近带边紫外光发射强度,总体发光峰位蓝移。(3)将制得的ZD-Ag NPs应用于上述ZnO量子点紫外光发射器件中,替代其中的ZnO QDs(120nm)层,既作为电子注入层又巧妙地引入了Ag纳米粒子,构建成Ag纳米粒子修饰的ZnO量子点紫外光发射器件,并最终成功提升了器件的紫外光发射效率。随后,通过对比分析ZD-Ag NPs与纯ZnO量子点样品的荧光寿命和变温光致发光谱等,验证了其发光增强来源于Ag纳米粒子局域表面等离子体与ZnO近带边激子和光子的共振耦合作用。
[Abstract]:Direct band-gap wide band gap (3.37eV) semiconductor ZnO has high exciton binding energy up to 60meV. It is easy to realize high efficiency exciton luminescence at room temperature or higher temperature, making it an ideal candidate material for UV emission devices. Compared with the ZnO bulk material, (quantum dots, QDs (QDs), due to the quantum size effect, lead to the broadening of the band gap and the blue shift of luminescence, which is expected to lead to a deeper ultraviolet emission of ZnO QDs. In recent years, the research on the luminous efficiency of optical emission devices enhanced by metal local surface plasmas has been paid more and more attention. Because the resonance extinction peak of Ag nanoparticles overlaps with the near band exciton emission peak of ZnO materials, it is suitable to enhance the luminescence efficiency of ZnO based UV emission devices. In this paper, the ZnO quantum dot colloidal solution prepared by sol-gel method and the ethanol solution of AgNO3 were first mixed. The ZnO quantum dot / Ag nanoparticles composite system (ZD-Ag NPs),) was prepared in one step and applied to the optimized ZnO quantum dot UV emission device. The ZnO near-edge UV emission efficiency of the device was improved. The experimental contents are as follows: (1) the uniformly dispersed ZnO quantum dot colloidal solution in ethanol phase was prepared by sol-gel method, and its related physical properties were characterized and analyzed, and then a certain amount of AgNO3 ethanol solution was fully mixed with it. The composite system of ZnO quantum dots and Ag nanoparticles can be prepared in one step without any other external conditions. The extinction peak of Ag nanoparticles can be adjusted by controlling the reaction time of the system. (2) A ZnO QDs with p-GaN/ZnO QDs (30nm) / Al _ 2O _ 3 / QDs (120nm) structure are designed and fabricated, and compared with the traditional PN junction optical emission devices with p-GaN/ZnO QDs (150nm) structure. The results show that the ZnO quantum dot ultraviolet emission device has higher optical emission efficiency and stronger near-band ultraviolet emission intensity of ZnO. (3) the ZD-Ag NPs has been used in the UV emission devices of the ZnO quantum dots to replace the ZnO QDs (120nm) layer, which is used as the electron injection layer and the Ag nanoparticles are introduced skillfully. The UV emission devices of ZnO quantum dots modified by Ag nanoparticles were constructed, and the UV emission efficiency of the devices was improved successfully. Then, the fluorescence lifetime and variable-temperature photoluminescence spectra of ZD-Ag NPs and pure ZnO quantum dot samples are compared and analyzed. It is verified that the enhanced luminescence originates from the resonance coupling between local surface plasmas of Ag nanoparticles and ZnO near-edge excitons and photons.
【学位授予单位】：东北师范大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN304.21;TN23
本文编号：2258122
[Abstract]:Direct band-gap wide band gap (3.37eV) semiconductor ZnO has high exciton binding energy up to 60meV. It is easy to realize high efficiency exciton luminescence at room temperature or higher temperature, making it an ideal candidate material for UV emission devices. Compared with the ZnO bulk material, (quantum dots, QDs (QDs), due to the quantum size effect, lead to the broadening of the band gap and the blue shift of luminescence, which is expected to lead to a deeper ultraviolet emission of ZnO QDs. In recent years, the research on the luminous efficiency of optical emission devices enhanced by metal local surface plasmas has been paid more and more attention. Because the resonance extinction peak of Ag nanoparticles overlaps with the near band exciton emission peak of ZnO materials, it is suitable to enhance the luminescence efficiency of ZnO based UV emission devices. In this paper, the ZnO quantum dot colloidal solution prepared by sol-gel method and the ethanol solution of AgNO3 were first mixed. The ZnO quantum dot / Ag nanoparticles composite system (ZD-Ag NPs),) was prepared in one step and applied to the optimized ZnO quantum dot UV emission device. The ZnO near-edge UV emission efficiency of the device was improved. The experimental contents are as follows: (1) the uniformly dispersed ZnO quantum dot colloidal solution in ethanol phase was prepared by sol-gel method, and its related physical properties were characterized and analyzed, and then a certain amount of AgNO3 ethanol solution was fully mixed with it. The composite system of ZnO quantum dots and Ag nanoparticles can be prepared in one step without any other external conditions. The extinction peak of Ag nanoparticles can be adjusted by controlling the reaction time of the system. (2) A ZnO QDs with p-GaN/ZnO QDs (30nm) / Al _ 2O _ 3 / QDs (120nm) structure are designed and fabricated, and compared with the traditional PN junction optical emission devices with p-GaN/ZnO QDs (150nm) structure. The results show that the ZnO quantum dot ultraviolet emission device has higher optical emission efficiency and stronger near-band ultraviolet emission intensity of ZnO. (3) the ZD-Ag NPs has been used in the UV emission devices of the ZnO quantum dots to replace the ZnO QDs (120nm) layer, which is used as the electron injection layer and the Ag nanoparticles are introduced skillfully. The UV emission devices of ZnO quantum dots modified by Ag nanoparticles were constructed, and the UV emission efficiency of the devices was improved successfully. Then, the fluorescence lifetime and variable-temperature photoluminescence spectra of ZD-Ag NPs and pure ZnO quantum dot samples are compared and analyzed. It is verified that the enhanced luminescence originates from the resonance coupling between local surface plasmas of Ag nanoparticles and ZnO near-edge excitons and photons.
【学位授予单位】：东北师范大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN304.21;TN23
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