氮掺铟锡锌薄膜晶体管的制备及其光电特性

发布时间：2018-10-10 19:55

【摘要】：以P型100硅作为衬底,采用射频磁控溅射技术,在室温下制备了氮掺杂氧化铟锡锌薄膜晶体管(ITZO TFTs),研究了氮气流量对氧化铟锡锌薄膜晶体管结构、光学、电学特性以及稳定性的影响。实验结果表明:在不同氮气流量条件下制备的氧化铟锡锌薄膜均为非晶态,在可见光范围内的平均透过率均在90%左右,光学带隙数值在3.28~3.32 e V之间变化。在氮气流量为4 m L/min时制备的ITZO TFTs,有源层与栅极电介质界面处的界面态密度(N~(max)_s)仅为4.3×10~(11)cm~(-2),场效应迁移率(μ_(FE))为18.72 cm~2/(V·s),开关比(I_(on/off))为10~6,亚阈值摆幅(S)为0.39 V/dec,电学性能最优。栅极正偏压应力测试结果表明,该器件具有最强的稳定性。因此,适量的氮掺杂可有效地实现器件氧空位的钝化,降低器件的界面态密度,提高ITZO TFTs的电学性能及稳定性。
[Abstract]:The structure and optical properties of indium tin zinc oxide thin film transistors (ITZO TFTs),) with nitrogen flow rate and indium tin zinc oxide thin film transistors were investigated by RF magnetron sputtering technique using P-type 100 silicon as substrate, and the effect of nitrogen flow rate on the structure and optical properties of indium tin zinc oxide thin film transistors was investigated. The effects of electrical properties and stability. The experimental results show that the indium tin zinc oxide films prepared at different nitrogen flow rates are amorphous, the average transmittance is about 90% in the visible range, and the optical band gap values vary from 3.28 to 3.32 EV. When the nitrogen flow rate is 4 m L/min, the interfacial state density (N- (max) _ s) at the interface between ITZO TFTs, active layer and gate dielectric is only 4.3 脳 10 ~ (11) cm~ (-2), the field effect mobility (渭 _ (FE) is 18.72 cm~2/ (V s), switching ratio (I _ (on/off), and the sub-threshold swing ratio (S) is 0.39 V / r. The results of the grid positive bias stress test show that the device has the strongest stability. Therefore, proper nitrogen doping can effectively achieve oxygen vacancy passivation, reduce the interfacial state density of the device, and improve the electrical properties and stability of ITZO TFTs.
【作者单位】：山东大学空间科学与物理学院;
【基金】：国家自然科学基金(11504202) 山东省科技攻关课题(2014GGX102022)资助项目~~
【分类号】：TN321.5

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