Ku波段GaN一片式收发组件芯片
发布时间：2018-10-11 11:05
【摘要】：报道了一款应用于Ku波段的GaN T/R MMIC。该芯片采用0.15μm GaN HEMT器件工艺制造,集成了T/R组件的接收通道和发射通道,芯片面积7.00mm×3.32mm。研制的MMIC集成了5位数字衰减器、5位数字移相器、前级低噪声放大器、后级低噪声放大器、驱动放大器、功率放大器、公用支路的小信号开关和收发切换的功率开关。在16~17GHz工作频带内测得该芯片接收通道增益大于21dB,噪声系数小于3.5dB;发射通道增益大于20.8dB,饱和功率大于40.8dBm,功率附加效率典型值30%。该芯片上集成的5位数字移相器、5位数字衰减器功能正常,达到设计要求。
[Abstract]:This paper reports a GaN T / R MMIC. used in Ku band. The chip is fabricated by 0.15 渭 m GaN HEMT device process and integrates the receiving and transmitting channels of the T / R module. The chip area is 7.00mm 脳 3.32mmm. The developed MMIC integrates 5 bit digital attenuator, 5 bit digital phase shifter, front stage low noise amplifier, rear stage low noise amplifier, drive amplifier, power amplifier, public branch small signal switch and transceiver switching power switch. It is found that the gain of receiving channel is more than 21dB, the noise coefficient is less than 3.5dB, the gain of transmission channel is more than 20.8 dB, the saturation power is more than 40.8dBmand the typical additional efficiency is 30. The 5-bit digital phase shifter and 5-bit digital attenuator have normal function and meet the design requirements.
【作者单位】： 南京电子器件研究所微波毫米波单片集成和模块电路重点实验室;
【分类号】：TN402
，
本文编号：2263961
[Abstract]:This paper reports a GaN T / R MMIC. used in Ku band. The chip is fabricated by 0.15 渭 m GaN HEMT device process and integrates the receiving and transmitting channels of the T / R module. The chip area is 7.00mm 脳 3.32mmm. The developed MMIC integrates 5 bit digital attenuator, 5 bit digital phase shifter, front stage low noise amplifier, rear stage low noise amplifier, drive amplifier, power amplifier, public branch small signal switch and transceiver switching power switch. It is found that the gain of receiving channel is more than 21dB, the noise coefficient is less than 3.5dB, the gain of transmission channel is more than 20.8 dB, the saturation power is more than 40.8dBmand the typical additional efficiency is 30. The 5-bit digital phase shifter and 5-bit digital attenuator have normal function and meet the design requirements.
【作者单位】： 南京电子器件研究所微波毫米波单片集成和模块电路重点实验室;
【分类号】：TN402
，
本文编号：2263961
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