非共振等离子体波THz器件响应研究
发布时间：2018-10-13 16:42
【摘要】：伴随着人们对于电磁辐射应用越来越广泛,THz辐射由于其特殊性在近年来越来越受到研究人员的关注。研究人对于作为THz技术重点的THz辐射源以及探测器件更高的性能追求从未停止。由于半导体器件制作工艺成熟且易于集成,因而以半导体器件为核心的THz器件受到了研究人员的偏爱。基于各种机理的半导体THz器件被不断的开发出来。等离子体波器件由于其独特的物理原理,在室温下也可以作为THz辐射发射器或THz辐射探测器来使用。本文通过对两种等离子体波器件MOSFET和HEMT的介绍以及对等离子体的介绍,得到器件沟道内的电子可以类比为等离子体的结论。由于人们通常用流体描述的方法来描述等离子体的行为,因此流体描述的方法可以用来描述等离子体波器件中的电子的行为。于是本文基于流体动力学方程,探讨了等离子体波器件中等离子体波产生的原因和边界条件。并对等离子体波器件中等离子体波的产生的物理意义进行了探讨。随后本文描绘了等离子体波器件用作THz探测器的潜力。基于流体力学方程得到了描述非共振等离子体波器件响应的数学模型。该数学模型描述的是在缓变沟道近似的条件下探测器的响应与栅压以及漏源电流的关系。通过对模型的分析得出了模型在栅压接近或者小于阈值电压时不再适用的结论。通过对栅压接近阈值电压或小于阈值电压时沟道电子密度与栅压的关系式的修正,得到了新的描述器件响应与栅压关系的数学模型。通过MATLAB软件首先对器件响应的理论模型与实际的测量数据进行对比,验证了模型的正确性。随后又对理论模型与实际测量数据之间的误差进行了分析,简要分析了栅漏电流,电子迁移率和实际电路对于误差的贡献。然后探讨了器件的响应与参数k',η以及温度的关系。再通过计算和分析得出了响应模型适用的范围。最后对于模型中的一些问题进行了说明,并描述了这些问题对于器件响应的影响。并对实际的器件结构的要求进行了说明,描述了等离子体波器件未来的主要发展方向。
[Abstract]:With the increasing application of electromagnetic radiation, THz radiation has attracted more and more attention of researchers in recent years because of its particularity. The search for higher performance of THz radiation sources and detectors, which are the focus of THz technology, has never stopped. Due to the mature fabrication process and easy integration of semiconductor devices, THz devices with semiconductor devices as the core are preferred by researchers. Semiconductor THz devices based on various mechanisms have been continuously developed. Plasma wave devices can also be used as THz radiation emitters or THz radiation detectors at room temperature due to their unique physical principles. Through the introduction of two kinds of plasma wave devices, MOSFET and HEMT, and the plasma, the conclusion that the electrons in the channel of the device can be analogous to plasma is obtained in this paper. Because people usually describe the behavior of plasma by fluid description method, fluid description method can be used to describe the behavior of electrons in plasma wave devices. Based on the hydrodynamic equation, the causes and boundary conditions of plasma waves in plasma wave devices are discussed in this paper. The physical meaning of plasma wave generation in plasma wave devices is also discussed. Then the potential of plasma wave devices as THz detectors is described. Based on the hydrodynamic equation, a mathematical model for describing the response of non-resonant plasmon wave devices is obtained. The mathematical model describes the relationship between the detector response and gate voltage and drain current under the condition of slowly varying channel approximation. Through the analysis of the model, the conclusion that the model is no longer applicable when the gate voltage is close to or less than the threshold voltage is obtained. By modifying the relationship between gate voltage and gate voltage when gate voltage is close to threshold voltage or less than threshold voltage, a new mathematical model describing the relationship between device response and gate voltage is obtained. The correctness of the model is verified by comparing the theoretical model of the device response with the actual measurement data by MATLAB software. Then the error between the theoretical model and the actual measurement data is analyzed, and the contribution of the gate leakage current, electron mobility and the actual circuit to the error is briefly analyzed. Then the relationship between the response of the device and the parameters KN, 畏 and temperature is discussed. Through calculation and analysis, the scope of application of the response model is obtained. Finally, some problems in the model are explained, and the effects of these problems on the device response are described. The requirements of practical device structures are also described, and the future development of plasma wave devices is described.
【学位授予单位】：西安电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386
本文编号：2269277
[Abstract]:With the increasing application of electromagnetic radiation, THz radiation has attracted more and more attention of researchers in recent years because of its particularity. The search for higher performance of THz radiation sources and detectors, which are the focus of THz technology, has never stopped. Due to the mature fabrication process and easy integration of semiconductor devices, THz devices with semiconductor devices as the core are preferred by researchers. Semiconductor THz devices based on various mechanisms have been continuously developed. Plasma wave devices can also be used as THz radiation emitters or THz radiation detectors at room temperature due to their unique physical principles. Through the introduction of two kinds of plasma wave devices, MOSFET and HEMT, and the plasma, the conclusion that the electrons in the channel of the device can be analogous to plasma is obtained in this paper. Because people usually describe the behavior of plasma by fluid description method, fluid description method can be used to describe the behavior of electrons in plasma wave devices. Based on the hydrodynamic equation, the causes and boundary conditions of plasma waves in plasma wave devices are discussed in this paper. The physical meaning of plasma wave generation in plasma wave devices is also discussed. Then the potential of plasma wave devices as THz detectors is described. Based on the hydrodynamic equation, a mathematical model for describing the response of non-resonant plasmon wave devices is obtained. The mathematical model describes the relationship between the detector response and gate voltage and drain current under the condition of slowly varying channel approximation. Through the analysis of the model, the conclusion that the model is no longer applicable when the gate voltage is close to or less than the threshold voltage is obtained. By modifying the relationship between gate voltage and gate voltage when gate voltage is close to threshold voltage or less than threshold voltage, a new mathematical model describing the relationship between device response and gate voltage is obtained. The correctness of the model is verified by comparing the theoretical model of the device response with the actual measurement data by MATLAB software. Then the error between the theoretical model and the actual measurement data is analyzed, and the contribution of the gate leakage current, electron mobility and the actual circuit to the error is briefly analyzed. Then the relationship between the response of the device and the parameters KN, 畏 and temperature is discussed. Through calculation and analysis, the scope of application of the response model is obtained. Finally, some problems in the model are explained, and the effects of these problems on the device response are described. The requirements of practical device structures are also described, and the future development of plasma wave devices is described.
【学位授予单位】：西安电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386
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