基于高K值衬底材料的黑磷背栅晶体管
发布时间：2018-10-13 16:29
【摘要】：为了提高黑磷晶体管的迁移率,并适合规模化制备,采用高K值HfO_2与Al_2O_3材料,晶体管沟道使用15nm厚度的黑磷薄膜,制备了黑磷背栅晶体管。测试其直流特性,栅极电压范围-10~10V,漏极电压范围-3~0V。常温下晶体管空穴迁移率达到210cm~2/(V·s),电子迁移率为37cm~2/(V·s),开关比4.5×10~2。并根据黑磷的带隙特性以及双极性特点,对其漏极电流与栅压、漏压曲线进行理论分析。结果表明,高K值材料对黑磷晶体管性能有明显提升,将进一步促进黑磷晶体管的实用化。
[Abstract]:In order to improve the mobility of black phosphorus transistors and be suitable for large-scale fabrication, high K value HfO_2 and Al_2O_3 materials were used to fabricate the black phosphorus back gate transistors. The black phosphorus thin films with 15nm thickness were used in the channel of the transistors. Test its DC characteristics, gate voltage range-10 V, drain voltage range-3 V. At room temperature, the hole mobility of transistors reaches 210cm~2/ (V s), electron mobility and the 37cm~2/ (V s), switching ratio is 4.5 脳 10 ~ 2. According to the band-gap and bipolar characteristics of black phosphorus, the drain current, gate voltage and leakage voltage curve are analyzed theoretically. The results show that the performance of black phosphorus transistor is improved obviously by high K value material, which will further promote the practicality of black phosphorus transistor.
【作者单位】： 合肥工业大学;中国科技大学;南京电子器件研究所;
【基金】：国家自然科学基金资助项目(51607050)
【分类号】：TN325
本文编号：2269250
[Abstract]:In order to improve the mobility of black phosphorus transistors and be suitable for large-scale fabrication, high K value HfO_2 and Al_2O_3 materials were used to fabricate the black phosphorus back gate transistors. The black phosphorus thin films with 15nm thickness were used in the channel of the transistors. Test its DC characteristics, gate voltage range-10 V, drain voltage range-3 V. At room temperature, the hole mobility of transistors reaches 210cm~2/ (V s), electron mobility and the 37cm~2/ (V s), switching ratio is 4.5 脳 10 ~ 2. According to the band-gap and bipolar characteristics of black phosphorus, the drain current, gate voltage and leakage voltage curve are analyzed theoretically. The results show that the performance of black phosphorus transistor is improved obviously by high K value material, which will further promote the practicality of black phosphorus transistor.
【作者单位】： 合肥工业大学;中国科技大学;南京电子器件研究所;
【基金】：国家自然科学基金资助项目(51607050)
【分类号】：TN325
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