智能功率芯片的过温保护分析与电路设计
发布时间：2018-10-16 11:29
【摘要】：与传统的智能功率模块相比,智能功率芯片具有体积小、功耗低等优点,随着电机紧凑型和可靠性要求的日益提高以及国家节能环保政策的实施,智能功率芯片的需求量正快速增长。然而,严苛的系统应用环境和独特的内部构造易使智能功率芯片温度升高,造成可靠性问题,因此一个高精度、稳定性良好的内置过温保护电路对智能功率芯片及其应用系统的可靠性极为重要。本文首先介绍了过温保护电路的工作原理和基本结构,并分析了片上温度检测技术及其性能和传统的智能功率芯片中过温保护电路存在的问题；其次,结合智能功率芯片的实际应用情况和特点对其过温保护进行了深入分析并设计了高可靠性的过温保护策略；最后,着重研究了三极管温度检测电路的线性度、灵敏度及电源电压三个参数,针对过温保护电路提出了一种优化的温度检测方法,设计了一款应用于智能功率芯片的高精度、低功耗过温保护电路并采用Cadence Spectre软件仿真验证。本文设计的过温保护电路,采用三极管的基极-发射极电压差△VBE进行温度检测,显著提高了线性度,减小电源电压变化和工艺偏差对过温保护开启温度点和关断温度点的影响：采用本文提出的温度检测方法,在低温区温度检测灵敏度较低,而在高温区灵敏度较高,从而减小基于△VBE的温度检测输出电压值,使得电路能够工作于低电源电压下,降低电路功耗；采用可再生比较器,利用其内部正反馈,提高电路的转换速率,从而提高过温保护电路的精度。本设计基于华润上华的0.5μm 600V SOI BCD工艺进行流片,测试结果显示,本文设计的过温保护电路,在50℃至150℃温度范围内,平均温度检测灵敏度大于11mV/℃,非线性误差小于5%：在电源电压从3V变化至6V时,过温保护关断温度和开启温度的偏差均小于2%：在电源电压为5V时电路整体功耗为0.65mW,测试结果满足设计要求。
[Abstract]:Compared with the traditional intelligent power module, the smart power chip has the advantages of small size, low power consumption and so on. With the increasing demand of compact motor and reliability and the implementation of national energy saving and environmental protection policy, Demand for smart power chips is growing rapidly. However, the harsh system application environment and unique internal structure tend to make the intelligent power chip temperature rise, resulting in reliability problems, so a high accuracy, It is very important for the reliability of the intelligent power chip and its application system to have a good internal temperature protection circuit. This paper first introduces the working principle and basic structure of the over-temperature protection circuit, and analyzes the on-chip temperature detection technology and its performance, as well as the problems existing in the traditional intelligent power chip over-temperature protection circuit. Combined with the practical application and characteristics of the intelligent power chip, the overtemperature protection is deeply analyzed and a high reliability overtemperature protection strategy is designed. Finally, the linearity of the transistor temperature detection circuit is studied emphatically. This paper presents an optimized temperature detection method for over-temperature protection circuit with three parameters, sensitivity and power supply voltage. A high-precision and low-power over-temperature protection circuit is designed for intelligent power chip and simulated by Cadence Spectre software. The circuit designed in this paper uses the base emitter voltage difference (VBE) of the Triode to detect the temperature, which improves the linearity of the circuit. Reducing the influence of voltage variation and process deviation of power supply on the open and off temperature points of overtemperature protection: the temperature detection method proposed in this paper has lower sensitivity in low temperature region and higher sensitivity in high temperature region. In order to reduce the output voltage of temperature detection based on VBE, the circuit can work at low power supply voltage, reduce the power consumption of the circuit, adopt the regenerative comparator and use its internal positive feedback to improve the conversion rate of the circuit. Thus, the accuracy of the overtemperature protection circuit is improved. The design is based on the flow sheet of China Resources China's 0.5 渭 m 600V SOI BCD process. The test results show that the average temperature detection sensitivity of the designed over-temperature protection circuit is greater than that of 11mV/ 鈩，
本文编号：2274219
[Abstract]:Compared with the traditional intelligent power module, the smart power chip has the advantages of small size, low power consumption and so on. With the increasing demand of compact motor and reliability and the implementation of national energy saving and environmental protection policy, Demand for smart power chips is growing rapidly. However, the harsh system application environment and unique internal structure tend to make the intelligent power chip temperature rise, resulting in reliability problems, so a high accuracy, It is very important for the reliability of the intelligent power chip and its application system to have a good internal temperature protection circuit. This paper first introduces the working principle and basic structure of the over-temperature protection circuit, and analyzes the on-chip temperature detection technology and its performance, as well as the problems existing in the traditional intelligent power chip over-temperature protection circuit. Combined with the practical application and characteristics of the intelligent power chip, the overtemperature protection is deeply analyzed and a high reliability overtemperature protection strategy is designed. Finally, the linearity of the transistor temperature detection circuit is studied emphatically. This paper presents an optimized temperature detection method for over-temperature protection circuit with three parameters, sensitivity and power supply voltage. A high-precision and low-power over-temperature protection circuit is designed for intelligent power chip and simulated by Cadence Spectre software. The circuit designed in this paper uses the base emitter voltage difference (VBE) of the Triode to detect the temperature, which improves the linearity of the circuit. Reducing the influence of voltage variation and process deviation of power supply on the open and off temperature points of overtemperature protection: the temperature detection method proposed in this paper has lower sensitivity in low temperature region and higher sensitivity in high temperature region. In order to reduce the output voltage of temperature detection based on VBE, the circuit can work at low power supply voltage, reduce the power consumption of the circuit, adopt the regenerative comparator and use its internal positive feedback to improve the conversion rate of the circuit. Thus, the accuracy of the overtemperature protection circuit is improved. The design is based on the flow sheet of China Resources China's 0.5 渭 m 600V SOI BCD process. The test results show that the average temperature detection sensitivity of the designed over-temperature protection circuit is greater than that of 11mV/ 鈩，
本文编号：2274219
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