MOS栅晶闸管电离辐射损伤研究

发布时间：2018-10-16 11:29

【摘要】：功率开关中,晶闸管具有近乎完美的导通压降,金属-氧化物半导体场效应晶体管(Metal-Oxide-Semiconductor Field-Effect Transistor,MOSFET)具有理想的控制特性。MOS栅晶闸管(MOS-Gated Thyristors,MGT)结合了两者的优点,是有望取代传统晶闸管的衍生器件。然而,由于晶闸管和MOSFET抗辐照能力都较差,MOS栅晶闸管能否在辐射环境中可靠工作需要进行进一步的考察。本文重点研究了MOS栅晶闸管类器件中的两种器件,MOS控制晶闸管(MOS Controlled Thyristor,MCT),以及基区电阻控制晶闸管(Base Resistance Controlled Thyristor,BRT),在地球俘获带内受到电离辐射时的响应机制。首先,本文建立了从环境中获取辐照粒子参数并导入TCAD(Technology Computer Aided Design)软件仿真的方法:确定了地球俘获带内的主要辐射粒子为质子;仿真给出了其能量和通量范围,以及不同能量的质子进入器件后的线性能量转移值和路径长度。另外,确定了在地球俘获带内,器件需要主要考虑的两种电离效应:单粒子效应和总剂量效应。然后,展示了MGT器件在满足耐压的情况下,提升正向导通电流和加快开关速度的一般方法。设计了耐压1400V、正向电流24kA/cm-2(@10V)、关断时间10μs左右的MCT,以及耐压1400V、正向电流25.6kA/cm-2(@10V)、关断时间2μs左右的BRT,并对两者进行了对比。完成了MCT器件的版图设计、流片和测试。最后,使用设计的MGT对质子的电离辐射效应进行了研究。在单粒子效应(Single Event Effect,SEE)研究中,确定了最容易受入射粒子影响的工作状态为阻断态,接着详细分析了该状态下单粒子在器件内部电离载流子的重分布过程及其演化原因,指出单粒子闩锁(Single Event Latch-up,SEL)或单粒子烧毁(Single Event Burnout,SEB)是单粒子辐照引发的主要效应,从外电路应用和器件设计两个角度提出了抑制单粒子闩锁的方法。在总剂量效应(Total Ionizing Dose,TID)研究中,讨论了器件特性退化机理,指出了其对结终端耐压的严重影响,从器件设计角度给出了加固的方法。
[Abstract]:In the power switch, the thyristor has nearly perfect on-voltage drop, and the metal-oxide semiconductor field effect transistor (Metal-Oxide-Semiconductor Field-Effect Transistor,MOSFET) has ideal control characteristics. The MOS gate thyristor (MOS-Gated Thyristors,MGT) combines the advantages of both. Is expected to replace the traditional thyristor derivative devices. However, due to the poor radiation resistance of thyristors and MOSFET, the reliability of MOS gate thyristors in radiation environment needs further investigation. In this paper, the response mechanism of two kinds of MOS gate thyristors, MOS controlled thyristor (MOS Controlled Thyristor,MCT) and base resistor controlled thyristor (Base Resistance Controlled Thyristor,BRT), under ionizing radiation in the capture band of the earth is studied. First of all, the method of obtaining the parameters of irradiated particles from the environment and importing them into TCAD (Technology Computer Aided Design) software is established: the main radiation particles in the capture band of the earth are determined to be protons, and their energy and flux ranges are given by the simulation. And the linear energy transfer value and path length of protons with different energies after entering the device. In addition, two kinds of ionization effects, single particle effect and total dose effect, which need to be considered in the earth capture band are determined. Then, the general method of raising forward conduction current and speeding up switching speed of MGT device is presented. The voltage-resistant 1400V, forward current 24kA/cm-2 (@ 10V), MCT, with turn-off time of about 10 渭 s and BRT, with withstand voltage of 1400V, forward current 25.6kA/cm-2 (@ 10V) and turn-off time of about 2 渭 s were designed and compared. The layout design, flow sheet and test of MCT device are completed. Finally, the ionizing radiation effect of proton is studied by using the designed MGT. In the study of single particle effect (Single Event Effect,SEE), the working state which is most susceptible to the incident particle is determined as the blocking state. Then the redistribution process of the ionization carrier in the device and its evolution are analyzed in detail. It is pointed out that single particle latch (Single Event Latch-up,SEL) or single particle burned (Single Event Burnout,SEB) are the main effects induced by single particle irradiation. A method to suppress single particle latch is proposed from the aspects of external circuit application and device design. In the study of total dose effect (Total Ionizing Dose,TID), the degradation mechanism of the device characteristics is discussed, and the serious influence of the device on the voltage resistance of the junction terminal is pointed out. The reinforcement method is given from the point of view of the device design.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN386

【相似文献】