一种低温度系数触发电流的可控硅设计
发布时间：2018-10-17 15:19
【摘要】：可控硅从上世纪50年代问世以来,经过近60年的发展已经在现代社会的生产和生活中扮演着越来越重要的角色:由于具有优良的调频、变速性能,可控硅被广泛应用在工业生产;同时可控硅也被大量应用在漏电保护器、白色家电以及摩托车配件等消费电子领域。根据触发电流的大小,可控硅被大致划分为强触发可控硅和微触发可控硅两大类。其中微触发可控硅由于具有常温下触发电流小、栅极功耗低等优点越来越受到市场的重视,但是微触发可控硅的触发电流受温度影响较大,高温下触发电流减小会带来误触发的问题,严重时甚至会使可控硅处于长开状态,失去开关的作用;低温下触发电流增大会带来触发困难,栅极功耗增大的问题。基于此,本文分别提出可以减小低温环境和高温环境下触发电流温度系数的方法,并且提供一种低温度系数触发电流的可控硅设计,旨在稳定微触发可控硅的触发电流温度系数,使其在高温下能稳定工作,避免误触发等问题的发生。本设计的主要参数指标是:正反向耐压均在800V以上,导通电压小于2V,常温下(25℃)的触发电流小于100μA,高温下(80℃)触发电流和常温下触发电流大小的比值大于0.5。本文主要包括以下几个方面:1、详细介绍可控硅的触发原理,从理论上分析触发电流随温度变化的原因,分别提出能够稳定低温和高温下触发电流温度系数的方法;2、对带有多晶硅电阻条的可控硅结构进行工艺仿真,拉偏工艺参数,优化过后使仿真结果符合设计要求。确定各部分尺寸后进行版图设计;3、完成工艺仿真、版图设计后进行流片实验,流片完成后进行测试,测试结果:正向击穿电压为800V,反向击穿电压1000V;125℃时的正向漏电为35μA,反向漏电为50μA;常温下(25℃)的触发电流IGT(25℃)为60μA,高温下(80℃)的触发电流IGT(80℃)为36μA,触发电流的温度系数IGT(80℃)/IGT(25℃)等于0.6;正向导通压降为0.96V;临界di/dt值为18A/μs,临界dv/dt值为20V/μs。测试结果表明:各项参数均达到设计要求。
[Abstract]:Since the advent of SCR in the 1950s, after nearly 60 years of development, it has played an increasingly important role in the production and life of modern society. Thyristor is widely used in industrial production, and it is also widely used in consumer electronics such as leakage protectors, white appliances and motorcycle accessories. According to the magnitude of trigger current, thyristor is divided into two categories: strong trigger thyristor and microtriggered thyristor. Among them, the micro-trigger thyristor has been paid more and more attention to by the market because of its advantages of low trigger current and low grid power consumption at room temperature, but the trigger current of micro-trigger thyristor is greatly affected by temperature. The decrease of trigger current at high temperature will lead to the problem of false trigger, and in serious cases, the thyristor will be in a long open state and lose the function of switch. At low temperature, the increase of trigger current will lead to the trigger difficulty and the increase of grid power consumption. Based on this, this paper proposes a method to reduce the trigger current temperature coefficient in low temperature environment and high temperature environment, and provides a low temperature coefficient trigger current thyristor design. The aim of this paper is to stabilize the trigger current temperature coefficient of microtrigger thyristor, so that it can work stably at high temperature and avoid the problem of misfiring. The main parameters of this design are as follows: the forward and backward voltages are above 800V, the conduction voltage is less than 2V, the triggering current at room temperature (25 鈩，
本文编号：2277093
[Abstract]:Since the advent of SCR in the 1950s, after nearly 60 years of development, it has played an increasingly important role in the production and life of modern society. Thyristor is widely used in industrial production, and it is also widely used in consumer electronics such as leakage protectors, white appliances and motorcycle accessories. According to the magnitude of trigger current, thyristor is divided into two categories: strong trigger thyristor and microtriggered thyristor. Among them, the micro-trigger thyristor has been paid more and more attention to by the market because of its advantages of low trigger current and low grid power consumption at room temperature, but the trigger current of micro-trigger thyristor is greatly affected by temperature. The decrease of trigger current at high temperature will lead to the problem of false trigger, and in serious cases, the thyristor will be in a long open state and lose the function of switch. At low temperature, the increase of trigger current will lead to the trigger difficulty and the increase of grid power consumption. Based on this, this paper proposes a method to reduce the trigger current temperature coefficient in low temperature environment and high temperature environment, and provides a low temperature coefficient trigger current thyristor design. The aim of this paper is to stabilize the trigger current temperature coefficient of microtrigger thyristor, so that it can work stably at high temperature and avoid the problem of misfiring. The main parameters of this design are as follows: the forward and backward voltages are above 800V, the conduction voltage is less than 2V, the triggering current at room temperature (25 鈩，
本文编号：2277093
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