2GHz硅基E类射频功率放大器设计

发布时间：2018-10-20 19:48

【摘要】：多年来砷化镓工艺一直凭借着高频特性好、损耗小、噪声低、频带宽、动态范围大等优点垄断了射频功率放大器的设计领域。但近年来,随着工艺的发展,硅基工艺中MOS器件特征尺寸不断减小,SiGe BiCMOS的截止频率已经高达200GHz,满足射频功率放大器设计的需求。同时,由于硅基工艺价格较低,成品率较高,因此有必要对硅基工艺下的射频功率放大器的设计进行研究。本文在介绍了功率放大器的工作原理、设计指标和不同种类功率放大器的优缺点的基础上,详细地介绍了E类功率放大器的设计原理,给出了使用0.18μm SiGe BiCMOS工艺的2GHz E类功率放大器的设计方法,完成了电路设计、前仿真、版图设计和后仿真。本文设计的E类功率放大器为全差分结构,输出级采用共源共栅结构以保证MOS管工作在安全电压下不被击穿。功率放大器的驱动级由谐振放大器构成,它能够保证在提供足够大的开关信号的同时消耗较小的功率。功率放大器的匹配网络和LC巴伦由高Q值片外元件组成,降低了损耗,进一步保证了功率放大器具有较高的效率。后仿真结果表明,在3.3V的供电电压下,功率放大器的输出功率可以达到30dBm,功率附加效率达到50%以上,功率增益大于23dB,输入端反射系数小于-15dB。本文所设计的功率放大器具有较大的输出功率和较高的效率,为硅基工艺下设计大功率高效率射频功率放大器打下了基础。由于本文设计的功率放大器采用硅基工艺制造,不但大大降低了制造成本,而且为功率放大器和收发机的其它电路模块集成在同一块芯片上提供了参考。
[Abstract]:For many years gallium arsenide technology has monopolized the design field of RF power amplifier by virtue of its advantages of high frequency characteristics, low loss, low noise, wide frequency bandwidth and wide dynamic range. But in recent years, with the development of technology, the cutoff frequency of MOS device has been reduced to 200GHz, which meets the demand of RF power amplifier design. At the same time, it is necessary to study the design of RF power amplifier based on silicon because of its low price and high yield. On the basis of introducing the working principle, design index and advantages and disadvantages of different kinds of power amplifier, this paper introduces the design principle of class E power amplifier in detail. The design method of 2GHz E power amplifier using 0.18 渭 m SiGe BiCMOS process is presented. The circuit design, pre-simulation, layout design and post-simulation are completed. The class E power amplifier designed in this paper is a fully differential structure, and the output stage adopts a common gate structure to ensure that the MOS transistor is not breakdown at the safe voltage. The driving stage of the power amplifier consists of a resonant amplifier, which can provide enough switching signals and consume less power. The matching network of the power amplifier and the LC Barron are composed of high Q value off-chip elements, which reduce the loss and further ensure the higher efficiency of the power amplifier. The simulation results show that the output power of the amplifier can reach 30 dBm, the additional power efficiency is more than 50%, the power gain is more than 23 dB, and the reflection coefficient of the input is less than -15 dB under the power supply voltage of 3.3 V. The power amplifier designed in this paper has high output power and high efficiency, which lays the foundation for designing high power and high efficiency RF power amplifier in silicon based process. Because the power amplifier designed in this paper is fabricated by silicon technology, it not only greatly reduces the manufacturing cost, but also provides a reference for the power amplifier and other circuit modules of the transceiver to be integrated on the same chip.
【学位授予单位】：东南大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN722.75

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