采用双阈值配置的抗老化N型多米诺或门
发布时间：2018-10-23 14:32
【摘要】：N型多米诺或门是高性能集成电路常用的动态单元,负偏置温度不稳定性(NBTI)引起的PMOS管老化问题已成为降低多米诺或门电路可靠性的主要因素之一。仿真分析表明,N型多米诺或门中各种PMOS管受NBTI的影响有明显差别。针对这种差异,提出一种双阈值配置的抗老化多米诺或门。对电路老化起关键作用的保持PMOS管和反相器PMOS管采用低阈值电压设计。仿真结果表明,在保证噪声容限和功耗的条件下,该双阈值配置PMOS管的多米诺或门在10年NBTI老化后仍有0.397%的时序余量。
[Abstract]:N-type dominoes or gates are commonly used dynamic cells in high performance integrated circuits. The aging problem of PMOS tubes caused by negative bias temperature instability (NBTI) has become one of the main factors to reduce the reliability of domino or gate circuits. Simulation results show that various PMOS tubes in N-type dominoes or gates are significantly different from each other under the influence of NBTI. In view of this difference, a double threshold configuration of anti-aging dominoes or gates is proposed. The low threshold voltage design is used for holding PMOS transistor and inverter PMOS transistor which play a key role in circuit aging. The simulation results show that under the condition of ensuring the noise tolerance and power consumption, the domino or gate with the double threshold PMOS transistor still has a time series allowance of 0.393% after 10 years of NBTI aging.
【作者单位】： 合肥工业大学电子科学与应用物理学院;江苏商贸职业学院电子信息系;
【基金】：国家自然科学基金资助项目(61371025,61574052) 南通市应用基础研究科技计划资助项目(GY12015037)
【分类号】：TN386.1
本文编号：2289527
[Abstract]:N-type dominoes or gates are commonly used dynamic cells in high performance integrated circuits. The aging problem of PMOS tubes caused by negative bias temperature instability (NBTI) has become one of the main factors to reduce the reliability of domino or gate circuits. Simulation results show that various PMOS tubes in N-type dominoes or gates are significantly different from each other under the influence of NBTI. In view of this difference, a double threshold configuration of anti-aging dominoes or gates is proposed. The low threshold voltage design is used for holding PMOS transistor and inverter PMOS transistor which play a key role in circuit aging. The simulation results show that under the condition of ensuring the noise tolerance and power consumption, the domino or gate with the double threshold PMOS transistor still has a time series allowance of 0.393% after 10 years of NBTI aging.
【作者单位】： 合肥工业大学电子科学与应用物理学院;江苏商贸职业学院电子信息系;
【基金】：国家自然科学基金资助项目(61371025,61574052) 南通市应用基础研究科技计划资助项目(GY12015037)
【分类号】：TN386.1
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