基于故障物理的热光效应器件可靠性分析与建模
发布时间：2018-10-23 17:52
【摘要】：基于热光效应的独特物理性质,新型光电子器件正在不断面世,已经逐渐在光通讯等应用领域占据重要地位。但是,热光效应器件的加工工艺与传统器件大相径庭,与此同时,日益苛刻的市场要求使器件的集成度进一步提高。因此热光效应器件的可靠性面临极大的挑战。目前,基于统计方法的可靠性模型,不仅试验周期长、经济成本高,而且很难从源头上找到新型热光效应器件的失效机理并掌握其失效规律,也几乎不可能揭示失效机理与可靠性之间的直接关系。本论文响应市场急需进一步提高热光效应器件可靠性的需求,从器件的失效模式入手,基于故障物理学的基本方法,系统深入地研究器件失效的根本原因,并分析失效与可靠性之间的关系。以此为依据,建立通用可靠性数学模型与仿真模型。首先,基于热光效应可变光衰减器的工作原理和制作工艺,针对集中失效的加热芯片互连线进行深入的失效行为研究。使用理论分析与试验模拟相结合的方法,推测造成器件失效的原因,根据环境模拟实验的结果,揭示电迁移是引起互连线发生失效的主要原因之一。通过进一步的理论分析,发现互连线失效是多物理场(电场、温度场、应力场、原子扩散)共同作用的结果。然后,根据理论分析的结果,以经典理论模型为基础,建立符合多物理场耦合条件下的数学模型,揭示电迁移作用下多物理量对互连线寿命的影响。在此基础上,使用ANSYS软件建立互连线的有限元模型,并完成热-电耦合和热-结构耦合仿真,分析互连线失效与温度梯度分布和应力梯度分布之间的关系。利用单元生死技术,并结合耦合场分析结果,模拟互连线失效,即空洞形成与长大过程,建立了仿真模型,为寿命模型打下基础。最后,通过可靠性寿命模拟试验验证了建立的数学模型和仿真模型。结果说明这些模型可合理预测寿命。本文的研究成果为热光效应器件可靠性的提高给出了新的思路,为加工工艺的优化提供了技术支持和理论基础。
[Abstract]:Based on the unique physical properties of thermo-optical effect, new optoelectronic devices are emerging and have been playing an important role in optical communication and other applications. However, the fabrication process of thermo-optical devices is quite different from that of traditional devices. At the same time, the increasingly demanding market demands further improve the integration of the devices. Therefore, the reliability of thermo-optical devices is facing a great challenge. At present, the reliability model based on statistical method not only has long test period and high economic cost, but also is difficult to find out the failure mechanism of new thermo-optical devices from the source and to master its failure law. It is also almost impossible to reveal the direct relationship between failure mechanism and reliability. In response to the market demand for further improving the reliability of thermo-optic devices, starting from the failure mode of the devices, based on the basic methods of fault physics, the fundamental causes of device failure are systematically and deeply studied. The relationship between failure and reliability is analyzed. Based on this, the general reliability mathematical model and simulation model are established. Firstly, based on the working principle and fabrication technology of the thermo-optical variable optical attenuator, the failure behavior of the centralized failure heating chip interconnection is studied. By combining theoretical analysis with experimental simulation, the causes of device failure are inferred. According to the results of environmental simulation experiments, it is revealed that electromigration is one of the main causes of interconnection failure. Through further theoretical analysis, it is found that the interconnect failure is the result of the interaction of multiple physical fields (electric field, temperature field, stress field, atomic diffusion). Then, based on the results of theoretical analysis and classical theoretical model, the mathematical model under the condition of multi-physical field coupling is established to reveal the influence of multi-physical variables on the interconnect lifetime under the action of electromigration. On this basis, the finite element model of interconnect is established by using ANSYS software, and thermoelectric coupling and thermal-structural coupling simulation are completed, and the relationship between interconnect failure and temperature gradient distribution and stress gradient distribution is analyzed. Based on the element birth and death technique and coupled field analysis, the failure of interconnect is simulated, that is, the process of cavity formation and growth, and the simulation model is established, which lays the foundation for the life model. Finally, the established mathematical model and simulation model are verified by the reliability life simulation test. The results show that these models can reasonably predict the life span. The research results in this paper provide a new idea for improving the reliability of thermo-optical devices and provide technical support and theoretical basis for the optimization of processing technology.
【学位授予单位】：湖北工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN715
本文编号：2290028
[Abstract]:Based on the unique physical properties of thermo-optical effect, new optoelectronic devices are emerging and have been playing an important role in optical communication and other applications. However, the fabrication process of thermo-optical devices is quite different from that of traditional devices. At the same time, the increasingly demanding market demands further improve the integration of the devices. Therefore, the reliability of thermo-optical devices is facing a great challenge. At present, the reliability model based on statistical method not only has long test period and high economic cost, but also is difficult to find out the failure mechanism of new thermo-optical devices from the source and to master its failure law. It is also almost impossible to reveal the direct relationship between failure mechanism and reliability. In response to the market demand for further improving the reliability of thermo-optic devices, starting from the failure mode of the devices, based on the basic methods of fault physics, the fundamental causes of device failure are systematically and deeply studied. The relationship between failure and reliability is analyzed. Based on this, the general reliability mathematical model and simulation model are established. Firstly, based on the working principle and fabrication technology of the thermo-optical variable optical attenuator, the failure behavior of the centralized failure heating chip interconnection is studied. By combining theoretical analysis with experimental simulation, the causes of device failure are inferred. According to the results of environmental simulation experiments, it is revealed that electromigration is one of the main causes of interconnection failure. Through further theoretical analysis, it is found that the interconnect failure is the result of the interaction of multiple physical fields (electric field, temperature field, stress field, atomic diffusion). Then, based on the results of theoretical analysis and classical theoretical model, the mathematical model under the condition of multi-physical field coupling is established to reveal the influence of multi-physical variables on the interconnect lifetime under the action of electromigration. On this basis, the finite element model of interconnect is established by using ANSYS software, and thermoelectric coupling and thermal-structural coupling simulation are completed, and the relationship between interconnect failure and temperature gradient distribution and stress gradient distribution is analyzed. Based on the element birth and death technique and coupled field analysis, the failure of interconnect is simulated, that is, the process of cavity formation and growth, and the simulation model is established, which lays the foundation for the life model. Finally, the established mathematical model and simulation model are verified by the reliability life simulation test. The results show that these models can reasonably predict the life span. The research results in this paper provide a new idea for improving the reliability of thermo-optical devices and provide technical support and theoretical basis for the optimization of processing technology.
【学位授予单位】：湖北工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN715
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