一种全MOS型超低功耗基准电压源设计
发布时间：2018-10-23 20:41
【摘要】：在0.18μm标准CMOS工艺模型下,利用亚阈值MOS管以及深线性区MOS管的特性,设计了一种全MOS型基准电压源。该基准源不使用电阻,具有超低功耗、低温度系数的特点,并且可在电源电压低于1V的情况下正常工作。当电源电压为1.2V,温度范围为-55℃~125℃,该基准源的温度系数为2.67×10~(-5)/℃,电源抑制比为-45.42dB@100Hz,功耗为105.96nW。
[Abstract]:Based on the 0.18 渭 m standard CMOS process model, a full MOS voltage reference source is designed using the characteristics of subthreshold MOS transistor and deep linear MOS transistor. The reference source does not use resistor, has the characteristics of ultra-low power consumption, low temperature coefficient, and can work normally when the supply voltage is less than 1V. When the power supply voltage is 1.2V and the temperature range is -55 鈩，
本文编号：2290406
[Abstract]:Based on the 0.18 渭 m standard CMOS process model, a full MOS voltage reference source is designed using the characteristics of subthreshold MOS transistor and deep linear MOS transistor. The reference source does not use resistor, has the characteristics of ultra-low power consumption, low temperature coefficient, and can work normally when the supply voltage is less than 1V. When the power supply voltage is 1.2V and the temperature range is -55 鈩，
本文编号：2290406
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