X波段100W GaAs单片大功率PIN限幅器
发布时间：2018-10-24 11:11
【摘要】：在101.6mm(4英寸)外延片上,研制出了大功率PIN限幅器芯片。根据大功率要求,优化了GaAs PIN二极管的I层厚度和表面结构,建立了大、小信号模型,通过优化设计,使限幅器既能承受100 W的输入功率,又有较低的插损。在8.5~10.5GHz内,测得该限幅器插入损耗约0.65dB,输入输出驻波≤1.5;当限幅器输入脉冲功率(9.5GHz,脉宽8ms、占空比40%)达50dBm(100 W)时,保持壳温120℃,输出漏功率最大18dBm,持续时间20min后,未见损坏。
[Abstract]:A high power PIN limiter chip has been developed on 101.6mm (4 inch) epitaxial wafer. According to the requirement of high power, I layer thickness and surface structure of GaAs PIN diode are optimized, and large and small signal models are established. By optimizing design, the limiter can withstand 100W input power and has low insertion loss. In 8.5~10.5GHz, the insertion loss of the limiter is about 0.65 dB, and the input and output standing wave is 鈮，
本文编号：2291223
[Abstract]:A high power PIN limiter chip has been developed on 101.6mm (4 inch) epitaxial wafer. According to the requirement of high power, I layer thickness and surface structure of GaAs PIN diode are optimized, and large and small signal models are established. By optimizing design, the limiter can withstand 100W input power and has low insertion loss. In 8.5~10.5GHz, the insertion loss of the limiter is about 0.65 dB, and the input and output standing wave is 鈮，
本文编号：2291223
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