微波开关芯片的研究与设计

发布时间：2018-10-24 16:36

【摘要】：随着无线通信技术的不断发展,现代微波系统对成本和集成度的要求越来越高,因此,采用互补金属氧化物半导体(CMOS)工艺将微波收发系统所有模块集成在同一块硅晶片上一直都是国内外研究的热点。目前,微波功率放大器和微波开关由于高功率处理能力的要求是微波前端实现全集成的主要限制因素,这篇文章主要对硅基CMOS微波开关进行研究,推动微波系统的前进与发展。本文对微波开关关键性能参数进行了详细地研究,并着重针对功率处理能力提出了改善方法,同时也探究了关键无源器件的模型和工作机制,以指导高品质无源器件的设计。三阱体硅互补金属氧化物半导体(Triple-well Bulk CMOS)工艺的衬底导电性和寄生电容使高频微波体硅CMOS开关难以实现低插入损耗,因此基于集总等效传输线结构设计高频微波开关以缓解晶体管的衬底泄漏损耗,从而获得低插损性能。高频高隔离度微波开关的设计在低插损微波开关基础上通过结构串叠来实现,以插损的牺牲换取隔离度的提升,并以晶体管串叠技术和前馈电容技术改善功率处理能力。绝缘体上硅(SOI)工艺由于埋氧层而可以使用高阻硅衬底缓解衬底耦合效应。低频微波开关使用浮体型绝缘体上硅N沟通场效应晶体管(FB SOI NMOSFET),采用串并式结构,使用晶体管串叠改善功率处理能力。论文对其封装也进行了考虑,并与开关进行联合仿真与设计,减小封装对开关微波性能的影响。通过对高频低插损微波开关的测试,在16GHz,发射模式和接收模式的测试插损分别为4.3dB和4.1dB,隔离度分别为26dB和24dB,输入0.1dB功率压缩点(IP0.1dB)和输入1dB功率压缩点(IP1dB)分别为8dBm和13.5dBm。高频高隔离度微波开关的测试结果表明:在17.5GHz,发射模式和接收模式的插损分别为2.7dB和2.3dB,隔离度分别为42dB和31dB,发射模式的IP1dB为22dBm,IP0.1dB为17dBm。低频高功率处理能力开关的仿真结果表明:各工作模式的插入损耗小于1.1dB,隔离度大于25dB,IP1dB约44dBm,IP0.1dB约41dBm。所设计的微波CMOS开关基本符合预期的性能要求,对硅基CMOS全集成微波系统的发展有一定的推动作用和借鉴意义。
[Abstract]:With the development of wireless communication technology, modern microwave system requires more and more cost and integration. Using complementary metal oxide semiconductor (CMOS) process to integrate all modules of microwave transceiver system on the same silicon wafer has always been a hot topic at home and abroad. At present, microwave power amplifier and microwave switch are the main limiting factors for the full integration of microwave front-end due to the requirement of high power processing capability. This paper mainly studies the silicon-based CMOS microwave switch to promote the progress and development of microwave system. In this paper, the key performance parameters of microwave switch are studied in detail, and the methods to improve the power processing ability are put forward. At the same time, the model and working mechanism of the key passive devices are also explored to guide the design of high quality passive devices. The substrate conductivity and parasitic capacitance of three-well silicon complementary metal oxide semiconductor (Triple-well Bulk CMOS) process) make it difficult to realize low insertion loss of high frequency microwave bulk silicon CMOS switch. Therefore, based on lumped equivalent transmission line structure, a high frequency microwave switch is designed to reduce the substrate leakage loss of transistors and obtain low insertion loss performance. The design of high frequency and high isolation microwave switch is based on low insertion loss microwave switch, which is realized by structure cascade, which gains isolation by sacrificing insertion loss, and improves power processing ability by transistor cascade technology and feedforward capacitor technology. High resistance silicon substrate can be used to mitigate the substrate coupling effect due to the buried oxygen layer in the silicon (SOI) process on insulators. The low frequency microwave switch uses the silicon N communication field effect transistor (FB SOI NMOSFET),) on the floating insulator to adopt the series-parallel structure and the transistor cascade to improve the power processing ability. In this paper, the encapsulation is also considered, and the simulation and design with the switch are carried out to reduce the influence of the package on the microwave performance of the switch. The test results of high frequency low insertion loss microwave switches show that at 16 GHz, the test insertion loss of transmission mode and receiving mode is 4.3dB and 4.1 dB, the isolation degree is 26dB and 24 dB, and the input 0.1dB power compression point (IP0.1dB) and input 1dB power compression point (IP1dB) are 8dBm and 13.5 dBm, respectively. The test results of high frequency and high isolation microwave switches show that at 17.5 GHz, the insertion loss of transmit mode and receiving mode is 2.7dB and 2.3 dB, the isolation degree is 42dB and 31 dB, and the IP1dB of transmitting mode is 22dBmP0.1dB is 17dBmm. The simulation results of low frequency and high power processing power switches show that the insertion loss of each operation mode is less than 1.1 dB, and the isolation degree is greater than 25 dB IP 1dB about 44dBmU IP 0.1dB about 41dBmm. The designed microwave CMOS switch basically accords with the expected performance requirements, and it has a certain role in promoting the development of silicon-based CMOS full integrated microwave system and reference significance.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN63

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