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松下开始量产GaN功率元件还提供驱动IC

发布时间:2018-10-25 11:48
【摘要】:正松下在慕尼黑电子展"electronica 2016"上,展示了GaN功率晶体管和该器件的应用实例。同时宣布,将开始量产耐压600V的GaN功率晶体管"PGA26E07BA"和"PGA26E19BA"。均采用8mm见方的DFN封装。还将开始量产支持该晶体管的栅极驱动IC"AN34092B"。这是松下第一次量产GaN功率晶体管产品。该公司于2013年3月开始样品供货耐压600V的GaN功率晶体管。此后不断在功率电子及功率器件相关
[Abstract]:Panasonic demonstrated the GaN power transistor and its application at electronica 2016 at Munich Electronics Show. At the same time, it was announced that it would begin to mass-produce 600V GaN power transistors "PGA26E07BA" and "PGA26E19BA". All adopt 8mm square DFN package. It will also begin mass production of the gate drive IC "AN34092B" that supports the transistor. This is Panasonic's first mass production of GaN power transistor products. The company began supplying samples of GaN power transistors with withstand voltage 600 V in March 2013. Since then, power electronics and power devices have continued to be related
【分类号】:F416.6;TN323.4

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