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E类功率MOSFET射频振荡器的研究

发布时间:2018-10-30 12:57
【摘要】:大功率射频振荡器可以将直流能量转化为大功率射频能量,广泛应用于工业、医学、军事、科研等众多领域。射频功率振荡器作为构成射频功率电源的核心技术,应用在等离子激发、激光激发、医疗核磁共振、射频感应加热等众多方面。随着半导体技术的发展,产生了众多适用于功率电子技术的大功率、高频率的功率半导体器件,也随之推动了大功率射频振荡器固态化、高频化、高效率方向的发展。功率放大器是射频功率振荡器的核心组成部分,主要完成能量的交互和积累,功率放大器的性能在一定程度上直接决定了射频功率振荡器的性能。E类功率放大器理想效率可达100%,将其用于射频功率振荡器可大大提高整体效率,并且具有元件少、体积小、成本低、重量轻等优点。本文设计和研究了一种以软开关E类功率放大器为核心的射频功率振荡器。首先对E类射频功率振荡器的组成形式,E类射频功率放大器的结构、工作原理进行了分析。重点介绍了E类功率放大器的设计原理,从理论上分析了损耗的产生,并以此为基础设计制作了高效率的E类射频振荡器电路。振荡器工作在E类软开关状态,采用ARF461型MOSFET作为核心功率放大器件,要求工作频率为13.56MHz,输出功率100W,效率90%。然后通过ADS仿真软件对不同条件下的电路性能进行分析,针对存在的问题根据E类射频振荡器的原理进行电路的优化,对实物的制作具有指导作用。最后,根据现有条件对E类射频功率振荡器进行电路实验,进一步验证设计的可行性。通过对实验波形和实验中发现的问题的分析和探讨,为后续的研究工作的展开奠定了基础。
[Abstract]:High power RF oscillator can convert DC energy into high power RF energy. It is widely used in many fields, such as industry, medicine, military, scientific research and so on. As the core technology of RF power supply, RF power oscillator is applied in plasma excitation, laser excitation, medical nuclear magnetic resonance, RF induction heating and so on. With the development of semiconductor technology, there are many high-power and high-frequency power semiconductor devices suitable for power electronic technology, which also promote the development of high-power RF oscillator solid-state, high-frequency and high-efficiency. Power amplifier is the core component of RF power oscillator, which mainly completes the interaction and accumulation of energy. The performance of the power amplifier directly determines the performance of the RF power oscillator to a certain extent. Small size, low cost, light weight and other advantages. In this paper, a kind of RF power oscillator with soft switching E power amplifier as its core is designed and studied. First, the composition of class E RF power oscillator, the structure and working principle of class E RF power amplifier are analyzed. This paper mainly introduces the design principle of class E power amplifier, analyzes the generation of loss theoretically, and designs and manufactures a high efficiency class E RF oscillator circuit based on it. The oscillator operates in the class E soft switching state. ARF461 type MOSFET is used as the core power amplifier device. The operating frequency is 13.56 MHz, the output power is 100 W, and the efficiency is 90%. Then the circuit performance under different conditions is analyzed by ADS simulation software, and the circuit is optimized according to the principle of class E RF oscillator. Finally, according to the existing conditions, the class E RF power oscillator circuit experiments are carried out to further verify the feasibility of the design. Through the analysis and discussion of the experimental waveform and the problems found in the experiment, it lays a foundation for further research work.
【学位授予单位】:郑州大学
【学位级别】:硕士
【学位授予年份】:2015
【分类号】:TN752

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2 鲍旭恒;E类MOSFET射频功率振荡器设计[D];郑州大学;2013年



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