多热源功率器件瞬态热阻测试技术研究及影响因素分析
发布时间：2018-10-31 13:20
【摘要】：电子器件的结温过高将会引发器件性能降低、可靠性降低、寿命降低等故障。随着器件小尺寸化和高集成化进程,有限的空间承载的功率密度越来越大,特别是多芯片组件(MCM)是典型的多热源器件,其散热问题已严重阻碍多芯片组件的发展。热阻是表征器件散热性能的重要热学参数,电子器件散热性能的研究离不开热阻的测试,因此展开对多热源功率器件瞬态热阻测试技术的研究具有重要意义和应用价值。论文分析了NPN型三极管的电学法热阻测试原理,将样品在不同测试电流、不同壳温、不同压力、相同功率不同电压-电流组合等条件下进行实验,总结出了各种因素对器件热学参数的影响规律,基于这些规律得到了瞬态热阻测试的最佳的测试条件。基于对线性叠加原理的分析,从实验和理论上验证了用线性叠加原理表征瞬态热阻矩阵的可行性。基于RC网络理论推导出瞬态热阻矩阵函数关于时间的表达式,利用Origin软件拟合分析瞬态热阻测试结果,验证了瞬态热阻矩阵函数的正确性。根据与器件实际物理结构相对应的CAUER模型,给出CAUER模型的图像表征形式即积分结构函数。运用积分结构函数对瞬态热响应曲线处理,从积分结构函数的转折点处分离器件的结构,分离得到的每一部分对应器件每层结构的热阻。利用Origin软件和理论计算验证了积分结构函数提取方法的可取性。
[Abstract]:Too high junction temperature of electronic devices will lead to lower performance, lower reliability and lower life. With the process of miniaturization and high integration, the power density of the limited space is increasing, especially the multi-chip module (MCM) is a typical multi-heat source device, its heat dissipation has seriously hindered the development of multi-chip components. Thermal resistance is an important thermal parameter to characterize the heat dissipation performance of the devices. The research of the thermal resistance of electronic devices is inseparable from the thermal resistance testing. Therefore, it is of great significance and application value to study the transient thermal resistance measurement technology of multi-heat source power devices. In this paper, the principle of thermal resistance measurement of NPN transistor is analyzed. The samples are tested under different testing current, different shell temperature, different pressure, same power, different voltage-current combination, etc. The influence of various factors on the thermal parameters of the device is summarized. Based on these laws, the optimal testing conditions for transient thermal resistance testing are obtained. Based on the analysis of the linear superposition principle, the feasibility of using the linear superposition principle to characterize the transient thermal resistance matrix is verified experimentally and theoretically. Based on the RC network theory, the time expression of the transient thermal resistance matrix function is derived. The transient thermal resistance matrix function is verified by fitting and analyzing the transient thermal resistance test results with the Origin software. According to the CAUER model corresponding to the actual physical structure of the device, the image representation of the CAUER model is presented, that is, the integral structure function. The integral structure function is used to deal with the transient thermal response curve. The structure of the device is separated from the turning point of the integral structure function, and the thermal resistance of each layer of the device is obtained by separating each part of the device. The feasibility of the integral structure function extraction method is verified by Origin software and theoretical calculation.
【学位授予单位】：华南理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN606
本文编号：2302344
[Abstract]:Too high junction temperature of electronic devices will lead to lower performance, lower reliability and lower life. With the process of miniaturization and high integration, the power density of the limited space is increasing, especially the multi-chip module (MCM) is a typical multi-heat source device, its heat dissipation has seriously hindered the development of multi-chip components. Thermal resistance is an important thermal parameter to characterize the heat dissipation performance of the devices. The research of the thermal resistance of electronic devices is inseparable from the thermal resistance testing. Therefore, it is of great significance and application value to study the transient thermal resistance measurement technology of multi-heat source power devices. In this paper, the principle of thermal resistance measurement of NPN transistor is analyzed. The samples are tested under different testing current, different shell temperature, different pressure, same power, different voltage-current combination, etc. The influence of various factors on the thermal parameters of the device is summarized. Based on these laws, the optimal testing conditions for transient thermal resistance testing are obtained. Based on the analysis of the linear superposition principle, the feasibility of using the linear superposition principle to characterize the transient thermal resistance matrix is verified experimentally and theoretically. Based on the RC network theory, the time expression of the transient thermal resistance matrix function is derived. The transient thermal resistance matrix function is verified by fitting and analyzing the transient thermal resistance test results with the Origin software. According to the CAUER model corresponding to the actual physical structure of the device, the image representation of the CAUER model is presented, that is, the integral structure function. The integral structure function is used to deal with the transient thermal response curve. The structure of the device is separated from the turning point of the integral structure function, and the thermal resistance of each layer of the device is obtained by separating each part of the device. The feasibility of the integral structure function extraction method is verified by Origin software and theoretical calculation.
【学位授予单位】：华南理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN606
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