高电源抑制比低温度系数超低功耗基准电压源
发布时间：2018-10-31 14:59
【摘要】：在0.18μm标准CMOS工艺模型下,利用亚阈值及深线性区MOS管的特性,设计了一种新颖的偏置电流产生电路,并采用此电路设计出一种具有高电源抑制比、低温度系数的全MOS型基准电压源。该电压源采用全MOS结构,不使用电阻,功耗超低。电源电压在0.9~3V变化时,该电压源均可正常工作,输出电压约为558mV。1.2V电源电压下,在-55℃~100℃温度范围内,该电压源的温度系数为2.3×10-5/℃,低频电源抑制比为-81dB,总功耗约为127nW。
[Abstract]:In the 0.18 渭 m standard CMOS process model, a novel bias current generation circuit is designed based on the characteristics of subthreshold and deep linear MOS transistors, and a high power supply rejection ratio is designed. Low temperature coefficient full MOS voltage reference source. The voltage source adopts full MOS structure, no resistance and low power consumption. The output voltage is about 558mV.1.2V voltage, and the temperature coefficient of the source is 2.3 脳 10 ~ (-5) / 鈩，
本文编号：2302612
[Abstract]:In the 0.18 渭 m standard CMOS process model, a novel bias current generation circuit is designed based on the characteristics of subthreshold and deep linear MOS transistors, and a high power supply rejection ratio is designed. Low temperature coefficient full MOS voltage reference source. The voltage source adopts full MOS structure, no resistance and low power consumption. The output voltage is about 558mV.1.2V voltage, and the temperature coefficient of the source is 2.3 脳 10 ~ (-5) / 鈩，
本文编号：2302612
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