超高压4H-SiC GTO晶闸管的结构优化设计
发布时间：2018-11-02 12:28
【摘要】：虽然Si晶闸管已成功应用多年,但是它的耐压和dv/dt、di/dt耐量已逐渐逼近Si材料的物理极限,仅依靠Si晶闸管的结构设计和制造工艺的优化来进一步提高单个晶闸管的耐压潜力已十分有限。随着SiC体材料的发展成熟,以SiC材料替代常规的Si材料,开发SiC晶闸管越来越引起人们的关注。为此,本文采用软件仿真方法,以20kVSiC门极可关断晶闸管(GTO)为例,开展超高压SiC p-GTO晶闸管结构设计与优化研究工作,研究器件的开通机制以及温度和少子寿命对器件性能的影响。主要研究内容和结论为:1.进行了 20kV SiC GTO晶闸管的设计和优化。采用n+-SiC衬底外延形成的p/n/p/p/n穿通型器件结构进行优化,优化结果为,p长基区的浓度和厚度分别为2×1014cm-3和160μm; P长基区和衬底间p+缓冲层的浓度和厚度分别为5×1017cm-3和1.5μm;其他外延层结构参数分别为:p+发射区 (浓度5×1019cm-3,厚度3.0μm,横向长度30μm)、n短基区 (浓度 2×1017cm-3,厚度 1.5 μm)和 n+衬底(浓度 2×1019cm-3 厚度 350 μ m)。2.研究了碳化硅GTO晶闸管的开通过程。与硅GTO晶闸管的扩展时间远远大于延迟时间不同,碳化硅GTO晶闸管的延迟时间和扩展时间属于同一纳秒数量级;SiCGTO晶闸管的扩展速度(1.64×104cm/s)远大于硅GTO晶闸管的扩展速度(1×104cm/s),约为1.64倍;SiCGTO晶闸管的扩展是受漂移和扩散共同作用的。3.完成了温度、寿命对SiCGTO晶闸管特性影响的研究。温度升高,碳化硅GTO晶闸管的正向阻断电压略微下降,而且在600K的高温下依然处于正向阻断模式,无自触发现象。温度从300K升高到600K,正向压降(@IAK=100A/cm2)约降低0.42V。温度从300K升高到500K,开通时间降低约38ns,关断时间增加约78ns。常温下,长基区的少子寿命由1μs增加到5 μs,正向压降降低显著,当少子寿命大于5μs后,正向压降基本不变;因此,对于20kVSiCGTO晶闸管,要获得较低的正向压降,长基区少子寿命应不低于5μs。
[Abstract]:Although Si thyristors have been successfully used for many years, their voltage resistance and dv/dt,di/dt tolerance have gradually approached the physical limit of Si materials. It is very limited to improve the voltage resistance of single thyristor only by optimizing the structure design and manufacturing process of Si thyristor. With the development and maturity of SiC materials, the development of SiC thyristors with SiC instead of conventional Si materials has attracted more and more attention. In this paper, a software simulation method is used to study the structure design and optimization of 20kVSiC gate turn-off thyristor (GTO). The on-off mechanism and the effects of temperature and minority carrier lifetime on the device performance are studied. The main contents and conclusions are as follows: 1. The design and optimization of 20kV SiC GTO thyristor are carried out. The structure of p/n/p/n perforated devices formed by n SiC substrate epitaxy is optimized. The results show that the concentration and thickness of p-long base region are 2 脳 1014cm-3 and 160 渭 m, respectively. The concentration and thickness of P buffer layer in the long base region and between the substrates are 5 脳 1017cm-3 and 1. 5 渭 m, respectively. The other structural parameters of the epitaxial layer are: p-emitting region (concentration 5 脳 1019cm-3, thickness 3.0 渭 m), transverse length 30 渭 m), n short base region (concentration 2 脳 1017cm-3, thickness 1.5 渭 m) and n substrate (concentration 2 脳 1019cm-3 thickness 350 渭 m). 2). The turn-on process of silicon carbide GTO thyristor is studied. The delay time and expansion time of silicon GTO thyristor are of the same nanosecond order, which is different from that of silicon GTO thyristor. The expansion speed of SiCGTO thyristor (1.64 脳 104cm/s) is much higher than that of silicon GTO thyristor (1 脳 104cm/s), which is about 1.64 times, and that of SiCGTO thyristor is affected by drift and diffusion. The effects of temperature and lifetime on the characteristics of SiCGTO thyristor were studied. With the increase of temperature, the forward blocking voltage of silicon carbide GTO thyristor decreases slightly, and it is still in the forward blocking mode at 600K high temperature, and there is no self-triggering phenomenon. When the temperature increases from 300K to 600K, the forward pressure drop (@ IAK=100A/cm2) decreases about 0.42V. When the temperature rises from 300K to 500K, the opening time decreases about 38ns, and the turn-off time increases about 78ns. At room temperature, the minority carrier lifetime in the long base region increases from 1 渭 s to 5 渭 s, and the forward pressure drop decreases significantly. When the minority carrier lifetime is greater than 5 渭 s, the forward pressure drop is basically unchanged. Therefore, for 20kVSiCGTO thyristors, in order to obtain lower forward pressure drop, the minority carrier lifetime in the long base region should not be less than 5 渭 s.
【学位授予单位】：西安理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN34
本文编号：2306014
[Abstract]:Although Si thyristors have been successfully used for many years, their voltage resistance and dv/dt,di/dt tolerance have gradually approached the physical limit of Si materials. It is very limited to improve the voltage resistance of single thyristor only by optimizing the structure design and manufacturing process of Si thyristor. With the development and maturity of SiC materials, the development of SiC thyristors with SiC instead of conventional Si materials has attracted more and more attention. In this paper, a software simulation method is used to study the structure design and optimization of 20kVSiC gate turn-off thyristor (GTO). The on-off mechanism and the effects of temperature and minority carrier lifetime on the device performance are studied. The main contents and conclusions are as follows: 1. The design and optimization of 20kV SiC GTO thyristor are carried out. The structure of p/n/p/n perforated devices formed by n SiC substrate epitaxy is optimized. The results show that the concentration and thickness of p-long base region are 2 脳 1014cm-3 and 160 渭 m, respectively. The concentration and thickness of P buffer layer in the long base region and between the substrates are 5 脳 1017cm-3 and 1. 5 渭 m, respectively. The other structural parameters of the epitaxial layer are: p-emitting region (concentration 5 脳 1019cm-3, thickness 3.0 渭 m), transverse length 30 渭 m), n short base region (concentration 2 脳 1017cm-3, thickness 1.5 渭 m) and n substrate (concentration 2 脳 1019cm-3 thickness 350 渭 m). 2). The turn-on process of silicon carbide GTO thyristor is studied. The delay time and expansion time of silicon GTO thyristor are of the same nanosecond order, which is different from that of silicon GTO thyristor. The expansion speed of SiCGTO thyristor (1.64 脳 104cm/s) is much higher than that of silicon GTO thyristor (1 脳 104cm/s), which is about 1.64 times, and that of SiCGTO thyristor is affected by drift and diffusion. The effects of temperature and lifetime on the characteristics of SiCGTO thyristor were studied. With the increase of temperature, the forward blocking voltage of silicon carbide GTO thyristor decreases slightly, and it is still in the forward blocking mode at 600K high temperature, and there is no self-triggering phenomenon. When the temperature increases from 300K to 600K, the forward pressure drop (@ IAK=100A/cm2) decreases about 0.42V. When the temperature rises from 300K to 500K, the opening time decreases about 38ns, and the turn-off time increases about 78ns. At room temperature, the minority carrier lifetime in the long base region increases from 1 渭 s to 5 渭 s, and the forward pressure drop decreases significantly. When the minority carrier lifetime is greater than 5 渭 s, the forward pressure drop is basically unchanged. Therefore, for 20kVSiCGTO thyristors, in order to obtain lower forward pressure drop, the minority carrier lifetime in the long base region should not be less than 5 渭 s.
【学位授予单位】：西安理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN34
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