硅基GaN功率MISFET新结构研究
发布时间：2018-11-06 07:01
【摘要】：由于GaN能和AlGaN等多元合金形成异质结并在异质结界面形成高迁移率的二维电子气(2DEG)且具有高禁带宽度,所以第三代半导体GaN异质结器件在高功率、高频应用中具有极大优势而受到了广泛研究。为了更好地兼容传统硅器件工艺平台而降低成本,硅基氮化镓(GaN-on-Si)增强型AlGaN/GaN功率金属绝缘层半导体场效应晶体管(MISFET)是目前研究的重点。为了解决传统增强型器件过度依赖精确度不高的干法刻蚀工艺这一问题,本文围绕设计结构、构造模型、仿真优化三个方面对硅基GaN功率MISFET新结构进行了研究,主要内容如下:(1)分析传统增强型AlGaN/GaN功率MISFET实现方法,对利用凹槽栅、p帽层、F离子处理等实现增强型性能的手段进行讨论,针对一种解决了批量生产阈值稳定性差、亚阈区斜率过高等问题且避免了使用难以激活的p型材料的新型栅调制金属-二维电子气隧穿器件进行了细致分析。(2)为了解决传统异质结器件的缺陷,以及进一步地优化栅调制隧穿器件性能,首先,本文提出并详细研究了侧槽栅隧穿场效应管(SG-TFET)新结构,其次,沿着SG-TFET的思路提出了浅场板集成栅(SFG)技术与一种配套的高温快速刻蚀制备工艺,并在此基础上提出了浅场板集成栅场效应管(SFG-FET)、半槽型阳极整流器(SHA-FER)等新结构,另外,通过SFG技术也提出了一种新型伽马型阳极肖特基阳极二极管(GA-SBD),实现了超低开启电压与高阻断特性的结合。本文通过数学物理方法深入分析并细致仿真了这几种全新的增强型器件结构,对其电流输运机理进行了细致探讨,建立了SG-TFET、SFG-FET与GA-SBD的电流电压模型,证明了这几类器件中的三极管具有低亚阈区摆幅,而所有新器件均具有凹槽工艺的高度容错性(或完全避免了凹槽刻蚀),且具有高电流输运能力、有功能集成等特点。
[Abstract]:Because GaN can form heterojunction with multicomponent alloys such as AlGaN and high mobility two-dimensional electron gas (2DEG) is formed on the heterojunction surface, and has high band gap, the third generation semiconductor GaN heterojunction devices have high power. High-frequency applications have great advantages and have been widely studied. In order to be more compatible with the traditional silicon device technology platform and reduce the cost, the silicon based gallium nitride (GaN-on-Si) enhanced AlGaN/GaN power metal insulating semiconductor field effect transistor (MISFET) is the focus of current research. In order to solve the problem that the traditional enhanced device is too dependent on the dry etching process with low precision, the new structure of silicon based GaN power MISFET is studied in this paper from three aspects: design structure, model construction and simulation optimization. The main contents are as follows: (1) the traditional enhanced AlGaN/GaN power MISFET implementation method is analyzed, and the methods to realize the enhanced performance, such as groove gate, p-cap layer and F ion treatment, are discussed. In order to solve the problem of low threshold stability in batch production, In order to solve the defects of traditional heterojunction devices, a novel gate modulated metal-two-dimensional electron-gas tunneling device, which is characterized by high sub-threshold slope and avoiding the difficult to activate p-type material, is analyzed in detail. (2) in order to solve the defects of traditional heterojunction devices, a novel gate modulation metal-two-dimensional electron gas tunneling device is analyzed in detail. And further optimize the performance of gate modulation tunneling devices. Firstly, a new structure of side-grooved gate tunneling field effect transistors (SG-TFET) is proposed and studied in detail. Along with the idea of SG-TFET, the technology of shallow field integrated gate (SFG) and a matching high temperature rapid etching process are proposed. On the basis of this, a shallow field plate integrated gate field effect transistor (SFG-FET) is proposed. In addition, a new gamma-ray anode Schottky anode diode (GA-SBD) is proposed by SFG technology, which combines ultra-low opening voltage with high blocking characteristics. This paper analyzes and simulates these new enhanced device structures by mathematical and physical methods, discusses the mechanism of current transport, and establishes the current and voltage models of SG-TFET,SFG-FET and GA-SBD. It is proved that the transistor of these kinds of devices has low subthreshold swing, and all the new devices have the characteristics of high fault-tolerant (or completely avoiding groove etching), high current transport ability and functional integration.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN386
本文编号：2313498
[Abstract]:Because GaN can form heterojunction with multicomponent alloys such as AlGaN and high mobility two-dimensional electron gas (2DEG) is formed on the heterojunction surface, and has high band gap, the third generation semiconductor GaN heterojunction devices have high power. High-frequency applications have great advantages and have been widely studied. In order to be more compatible with the traditional silicon device technology platform and reduce the cost, the silicon based gallium nitride (GaN-on-Si) enhanced AlGaN/GaN power metal insulating semiconductor field effect transistor (MISFET) is the focus of current research. In order to solve the problem that the traditional enhanced device is too dependent on the dry etching process with low precision, the new structure of silicon based GaN power MISFET is studied in this paper from three aspects: design structure, model construction and simulation optimization. The main contents are as follows: (1) the traditional enhanced AlGaN/GaN power MISFET implementation method is analyzed, and the methods to realize the enhanced performance, such as groove gate, p-cap layer and F ion treatment, are discussed. In order to solve the problem of low threshold stability in batch production, In order to solve the defects of traditional heterojunction devices, a novel gate modulated metal-two-dimensional electron-gas tunneling device, which is characterized by high sub-threshold slope and avoiding the difficult to activate p-type material, is analyzed in detail. (2) in order to solve the defects of traditional heterojunction devices, a novel gate modulation metal-two-dimensional electron gas tunneling device is analyzed in detail. And further optimize the performance of gate modulation tunneling devices. Firstly, a new structure of side-grooved gate tunneling field effect transistors (SG-TFET) is proposed and studied in detail. Along with the idea of SG-TFET, the technology of shallow field integrated gate (SFG) and a matching high temperature rapid etching process are proposed. On the basis of this, a shallow field plate integrated gate field effect transistor (SFG-FET) is proposed. In addition, a new gamma-ray anode Schottky anode diode (GA-SBD) is proposed by SFG technology, which combines ultra-low opening voltage with high blocking characteristics. This paper analyzes and simulates these new enhanced device structures by mathematical and physical methods, discusses the mechanism of current transport, and establishes the current and voltage models of SG-TFET,SFG-FET and GA-SBD. It is proved that the transistor of these kinds of devices has low subthreshold swing, and all the new devices have the characteristics of high fault-tolerant (or completely avoiding groove etching), high current transport ability and functional integration.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN386
【参考文献】
相关硕士学位论文 前1条
1 李建;三维增强型AlGaN/GaN HEMT的仿真分析[D];电子科技大学;2016年
，本文编号：2313498
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