P沟道VDMOS器件抗辐射加固技术研究
发布时间：2018-11-07 21:32
【摘要】：针对功率器件的抗辐射加固技术,从入射粒子对半导体材料的辐射损伤机理出发,设计了一种-150 V抗辐射P沟道VDMOS器件。该器件采取的抗辐射加固措施有:在颈区的上方形成局部厚场氧化层结构;在N体区进行高剂量离子注入掺杂;在850℃低温条件下生长栅氧化层。通过仿真分析和试验进行了验证,该器件在最劣漏偏置条件下抗总剂量达到3 k Gy,抗单粒子烧毁和单粒子栅穿的LET值为99.1 Me V·cm~2/mg。该器件适用于星用抗辐射DC-DC电源系统。
[Abstract]:Based on the radiation damage mechanism of incident particles to semiconductor materials, a P-channel VDMOS device with -150V radiation resistance is designed. The anti-radiation strengthening measures are as follows: forming a local thick field oxide structure above the neck region, doping high dose ion implantation in the N-body region, and growing gate oxide layer at 850 鈩，
本文编号：2317626
[Abstract]:Based on the radiation damage mechanism of incident particles to semiconductor materials, a P-channel VDMOS device with -150V radiation resistance is designed. The anti-radiation strengthening measures are as follows: forming a local thick field oxide structure above the neck region, doping high dose ion implantation in the N-body region, and growing gate oxide layer at 850 鈩，
本文编号：2317626
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