毫米波上变频混频器芯片设计

发布时间：2018-11-08 19:19

【摘要】：近年来,大数据、超高清视频等有着大存储量的技术得到高速发展,其对数据的无线传输提出了新的需求,现有的无线通信技术已经远不能满足人们的需求,毫米波无线通信技术,有着大宽带的绝对优势使其成为未来民用通信的发展方向。现有的毫米波通信几乎都是满足军用需求,其成本高且不易被小型化,因此基于低成本的CMOS工艺得到广泛关注。中国也提出基于45GHz的Q-LinkPan无线通信标准,其相对于国际上广泛采用的60GHz标准的优势在于大气衰减较弱,易于长距离通信。本课题设计的上变频混频器和调制器正是应用于45GHz频段发射机中的重要模块。本文在研究混频器设计的基础之上,着重研究了混频器的快速简单模型,其主要分析了混频器各部分元件对混频器的增益和三阶交调量的关系,为混频器的参数优化提供了很大的帮助。文中也研究了一些特殊技术来提升基本的Gilbert混频器的性能,包括Multi-tanh技术和负阻技术,并对这些技术进行了分析;在设计混频器使用的巴伦时,为变压器建立了六端口模型,并详述设计匹配巴伦的方法,在此过程中也分析和改善了巴伦的平衡性问题;本文也设计了一个具有高隔离度的毫米波OOK调制器,并且应用于发射机系统芯片中,其电路借鉴了基本双栅混频器结构,并研究了相关改进技术来提高其隔离度。本文所有的电路设计都是采用台积电CMOS 90nmRF 1P9M工艺。在设计过程中简述了相关版图的注意事项。上述的上边频混频器最终仿真结果为:增益为5dB、中频带宽为4.3GHz、输入三阶交调点为0.89dBm、输出1dB压缩点为-3.5dBm。另外本文设计调制器最终结果为:增益为1.1dB、数据率3Gbps、输出1dB压缩点为0.85dBm、隔离度为65dB、功耗为64.8mW。在采用单端本振源的情况下其增益测试结果和仿真结果吻合,并且隔离度为24dB,已满足系统的要求。最后采用该结构调制器的发射机芯片的隔离度测试结果为40dB,与仿真结果有差异,并分析了其原因。
[Abstract]:In recent years, big data, ultra-high definition video and other technologies with large storage have been developed at a high speed, which has put forward a new demand for wireless transmission of data. The existing wireless communication technology has been far from being able to meet the needs of people. Millimeter wave wireless communication technology, with the absolute advantage of large broadband, makes it the future development direction of civil communications. The existing millimeter-wave communication almost meets the military demand, its cost is high and is not easy to be miniaturized, so the low-cost CMOS process has been paid more and more attention. China has also put forward the Q-LinkPan wireless communication standard based on 45GHz, which has the advantage of weak atmospheric attenuation and easy long distance communication compared with the widely used 60GHz standard in the world. The up-conversion mixer and modulator designed in this paper are the important modules used in 45GHz transmitter. On the basis of studying the design of mixer, this paper focuses on the fast simple model of mixer, which mainly analyzes the relationship between the gain of each part of mixer and the third order intermodulation. It provides a great help for the parameter optimization of mixer. This paper also studies some special techniques to improve the performance of basic Gilbert mixers, including Multi-tanh technology and negative resistance technology, and analyzes these technologies. In the design of Barron mixer, a six-port model is established for the transformer, and the method of matching Barron is described in detail. In the process, the balance of Balun is also analyzed and improved. In this paper, a millimeter-wave OOK modulator with high isolation is also designed and applied to the transmitter system chip. The circuit of this modulator is based on the basic dual-gate mixer structure, and the related improved techniques are studied to improve the isolation. All the circuit designs in this paper are based on TSMC CMOS 90nmRF 1P9M process. In the process of design, the attention of the relevant layout is briefly described. The simulation results are as follows: gain is 5 dB, if bandwidth is 4.3 GHz, input third-order crossover is 0.89 dBmand output 1dB compression point is -3.5 dBm. In addition, the final results of the proposed modulator are as follows: gain is 1.1 dB, data rate is 3 Gbps. the output 1dB compression point is 0.85 dBm, isolation is 65 dB, power consumption is 64.8 MW. In the case of single-ended local oscillator, the gain test results are in good agreement with the simulation results, and the isolation degree is 24dB, which meets the requirements of the system. Finally, the isolation test result of the transmitter chip with this structure modulator is 40 dB, which is different from the simulation result, and the reason is analyzed.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN773

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