基于溶液法的金属氧化物薄膜晶体管工艺及性能研究
发布时间：2018-11-09 07:27
【摘要】：金属氧化物薄膜晶体管(Metal Oxide Thin film Transistors,MOTFTs)因在其在未来大尺寸、高帧率和高分辨率的平板显示器中巨大的潜在应用价值而受到研究者们的广泛关注。金属氧化物半导体薄膜晶体管技术存在诸多优点,包括高载流子迁移率、高光学透过率和低工艺温度等。本文以基于溶液法制备以高介电常数的纳米复合结构为绝缘层,氧化铟(In_2O_3)为有源层的金属氧化物薄膜晶体管为研究课题,以制备出高迁移率与低驱动电压的高性能薄膜晶体管为目标,研究了溶液法制备的氧化铝与聚(4-乙烯基苯酚)(Poly(4-vinyphenol),PVP)纳米复合结构绝缘层以及修饰层对器件性能的改变,以及基于溶液法和燃烧合成法制备氧化铟半导体层的器件的性能。具体研究内容包括:1. 基于Al_2O_3与PVP纳米复合结构绝缘层及所制备的TFT器件性能研究。采用Al_2O_3与PVP纳米复合结构绝缘体作为绝缘层,研究了不同PVP浓度对绝缘层的界面形貌以及电学性能的影响,并通过制备的并五苯TFT器件研究了纳米复合结构绝缘层对薄膜晶体管器件性能的影响。当PVP浓度为10%有最高的器件性能,其载流子迁移率为0.27cm~2/(V·s),电流开关比为3.1×10~4。随后使用聚甲基丙烯酸甲酯(Polymethylmethacrylate,PMMA)作为纳米复合结构绝缘层的修饰层,研究了修饰层对绝缘层性能的影响,所制得的器件载流子迁移率最高达到0.49cm~2/(V·s),电流开关比为7.8×10~4。2.基于溶液法制备金属氧化物有源层的TFT性能研究。分别研究了不同的热处理温度以及使用燃烧合成法工艺对氧化铟薄膜和器件性能的影响。使用溶液法时,当热处理温度为350℃时,制备的氧化铟薄膜晶体管器件性能为器件的迁移率为0.57cm~2/(V·s),同时器件的电流开关比达到了3.5×10~4。通过使用燃烧合成法工艺,在金属氧化物前驱体溶液中添加燃料,利用燃料在热处理过程中的放热反应,可以大幅降低有源层热处理温度。利用该方法,制备出的器件迁移率为0.23cm~2/(V·s),电流开关比为6.6×10~3。
[Abstract]:Metal oxide thin Film Transistor (Metal Oxide Thin film Transistors,MOTFTs) has attracted wide attention due to its great potential application value in large size, high frame rate and high resolution flat panel displays in the future. Metal oxide semiconductor thin film transistor technology has many advantages, including high carrier mobility, high optical transmittance and low process temperature. In this paper, metal oxide thin film transistors with high dielectric constant and indium oxide (In_2O_3) as active layer are prepared by solution method. The preparation of high performance thin film transistors with high mobility and low driving voltage was studied. The alumina and poly (4-vinylphenol) (Poly (4-vinyphenol) were prepared by solution method. PVP) nanocomposite structure insulation layer and modified layer on the performance of the device, and based on the solution method and combustion synthesis method to prepare indium oxide semiconductor layer device performance. The specific research contents include: 1. The properties of TFT devices based on Al_2O_3 and PVP nanocomposite structure insulation layer are studied. The influence of different PVP concentration on the interface morphology and electrical properties of Al_2O_3 / PVP nanocomposite insulator was studied. The effects of nanocomposite insulation layer on the performance of thin film transistor devices were investigated by using pentaben TFT devices. When the concentration of PVP is 10%, the maximum performance of the device is obtained, and the carrier mobility is 3.1 脳 10 ~ (4) 0.27cm~2/ (V s), current-switching ratio. Then, polymethyl methacrylate (Polymethylmethacrylate,PMMA) was used as the modified layer of nanocomposite insulation layer. The effect of the modified layer on the properties of the insulating layer was studied. The maximum carrier mobility of the device was up to 0.49cm~2/ (V s),. The current switching ratio is 7.8 脳 10 ~ (-2). TFT properties of metal oxide active layer prepared by solution method. The effects of different heat treatment temperature and combustion synthesis process on the properties of indium oxide films and devices were studied. With the solution method, when the heat treatment temperature is 350 鈩，
本文编号：2319748
[Abstract]:Metal oxide thin Film Transistor (Metal Oxide Thin film Transistors,MOTFTs) has attracted wide attention due to its great potential application value in large size, high frame rate and high resolution flat panel displays in the future. Metal oxide semiconductor thin film transistor technology has many advantages, including high carrier mobility, high optical transmittance and low process temperature. In this paper, metal oxide thin film transistors with high dielectric constant and indium oxide (In_2O_3) as active layer are prepared by solution method. The preparation of high performance thin film transistors with high mobility and low driving voltage was studied. The alumina and poly (4-vinylphenol) (Poly (4-vinyphenol) were prepared by solution method. PVP) nanocomposite structure insulation layer and modified layer on the performance of the device, and based on the solution method and combustion synthesis method to prepare indium oxide semiconductor layer device performance. The specific research contents include: 1. The properties of TFT devices based on Al_2O_3 and PVP nanocomposite structure insulation layer are studied. The influence of different PVP concentration on the interface morphology and electrical properties of Al_2O_3 / PVP nanocomposite insulator was studied. The effects of nanocomposite insulation layer on the performance of thin film transistor devices were investigated by using pentaben TFT devices. When the concentration of PVP is 10%, the maximum performance of the device is obtained, and the carrier mobility is 3.1 脳 10 ~ (4) 0.27cm~2/ (V s), current-switching ratio. Then, polymethyl methacrylate (Polymethylmethacrylate,PMMA) was used as the modified layer of nanocomposite insulation layer. The effect of the modified layer on the properties of the insulating layer was studied. The maximum carrier mobility of the device was up to 0.49cm~2/ (V s),. The current switching ratio is 7.8 脳 10 ~ (-2). TFT properties of metal oxide active layer prepared by solution method. The effects of different heat treatment temperature and combustion synthesis process on the properties of indium oxide films and devices were studied. With the solution method, when the heat treatment temperature is 350 鈩，
本文编号：2319748
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