一种高精度过温保护电路的设计
发布时间：2018-11-09 08:08
【摘要】：基于UMC 0.25μm BCD工艺,设计了一款高精度过温保护电路。通过基准电路中三极管的基极-发射极电压的负温度特性实现温度检测,调节电阻的比值产生迟滞温度量,避免了电路热振荡现象。经过HSPICE仿真验证,电路在温度130℃时,过温保护信号发生翻转,关断芯片,待温度降低到99℃时再次开启,具有31℃迟滞量。在电源电压变化时,过温保护电路的过温阈值和迟滞温度漂移量最大仅为0.24℃偏差。
[Abstract]:Based on UMC 0. 25 渭 m BCD process, a high-precision over-temperature protection circuit is designed. The temperature detection is realized by the negative temperature characteristic of the base-emitter voltage of the Triode in the reference circuit, the hysteresis temperature is produced by adjusting the ratio of the resistor, and the thermal oscillation of the circuit is avoided. The circuit is verified by HSPICE simulation, when the temperature is 130 鈩，
本文编号：2319840
[Abstract]:Based on UMC 0. 25 渭 m BCD process, a high-precision over-temperature protection circuit is designed. The temperature detection is realized by the negative temperature characteristic of the base-emitter voltage of the Triode in the reference circuit, the hysteresis temperature is produced by adjusting the ratio of the resistor, and the thermal oscillation of the circuit is avoided. The circuit is verified by HSPICE simulation, when the temperature is 130 鈩，
本文编号：2319840
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