硅基半导体热滞现象的研究

发布时间：2018-11-09 08:20

【摘要】：采用四线法研究Ag/Si O2/p-Si∶B/Si O2/Ag器件在不同温度下的电输运性能(V-I特性),在低温V-I特性曲线中观察到了明显的热滞现象.为了消除热滞现象带来的实验误差,文中提出了采用增强系统热传导以及延长连续两次测量的间隔时间的方法,并通过延长连续两次测量时间间隔的方式消除了热滞对器件电输运性能的影响.结果表明,在进行半导体基材料的电性能及磁阻效应的研究时,必须考虑热效应可能带来的影响,否则将导致错误的实验结果.
[Abstract]:The electrical transport properties (V-I characteristics) of Ag/Si O2/p-Si:B/Si O2/Ag devices at different temperatures are studied by four-wire method. The obvious thermal hysteresis phenomenon is observed in the V-I characteristic curves at low temperature. In order to eliminate the experimental error caused by thermal hysteresis, a method of enhancing the heat conduction of the system and prolonging the interval between two successive measurements is proposed in this paper. The influence of thermal hysteresis on the electrical transport performance of the device is eliminated by extending the time interval between two successive measurements. The results show that the thermal effect must be taken into account in the study of the electrical properties and magnetoresistive effects of semiconductor based materials, otherwise it will lead to wrong experimental results.
【作者单位】：武汉理工大学材料复合新技术国家重点实验室;
【基金】：国家自然科学基金资助项目(11574243,11174231)~~
【分类号】：TN304

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