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K波段宽带噪声源研究

发布时间:2018-11-09 12:54
【摘要】:噪声源可以用于原始信号的干扰、通讯系统的加压损伤测试、参考电平比较、通信和雷达系统的故障隔离测试、接收机相位跟踪和带宽测试、校调高速A/D转换器的数字转化误差的随机化等地方;同时,噪声源覆盖频率范围广,用在测试系统中能够提高测试效率,对其进行研究具有重要的意义。因此,本文选择对K波段宽带噪声源进行研究。本课题研究的K波段宽带噪声源频率范围为22~32GHz,采用噪声二极管作为噪声源的核心器件。相对于国内传统噪声源主要集中在低频率、窄频带噪声输出,本论文将实现在22GHz以上较高频率输出噪声信号,并且实现带宽高达10GHz和相对带宽达到37%的宽频带噪声信号输出。首先,将完成噪声二极管等效参数提取;其次,对噪声二极管进行阻抗匹配,实现噪声信号高平坦度、高超噪比输出;最后,完成噪声源超噪比测量和不确定度分析。整个课题设计分为低噪声放大电路设计、噪声源电路设计与噪声二极管参数提取、噪声二极管阻抗匹配与超噪比测量三个部分。低噪声放大电路部分由提供+3.5V和-0.5V电压的供电电路和射频电路两部分组成;噪声源电路由恒定输出15-25mA电流的恒流源、提供直流偏置的低通滤波器、噪声二极管和输出隔直电路组成。噪声源电路加工和装配好以后,首先使用矢量网络分析仪测量噪声源电路的11S参数,然后在HFSS中建立相应的噪声源3D等效模型,并在HFSS中用RLC边界来等效噪声二极管,通过调整模型中RLC边界中的值,使噪声源仿真模型的11S参数与矢量网络分析仪测得的11S参数基本一致,从而提取到噪声二极管高频等效参数。噪声二极管阻抗匹配需要先将噪声源HFSS仿真模型拆分为三个部分,并将三个部分的S2P文件导入ADS中进行简单阻抗匹配,然后将匹配结果导入HFSS中进行精确仿真,再将仿真结果导入AutoCAD中进行电路设计。加工并完成装配,最后用频谱分析仪测量噪声源经过低噪声放大器放大后的噪声功率谱密度,通过公式PSD(dBm/Hz)(28)-174dBm/Hz(10)ENR计算可得噪声源的ENR,最终输出噪声信号的超噪比大于20dB,其平坦度在±2dB以内。
[Abstract]:The noise source can be used for the interference of the original signal, the compression damage test of the communication system, the reference level comparison, the fault isolation test of the communication and radar system, the receiver phase tracking and the bandwidth testing. The randomization of digital conversion error of high speed A / D converter; At the same time, the noise source covers a wide range of frequencies, which can improve the test efficiency in the test system, so it is of great significance to study the noise source. Therefore, this paper chooses to study K band broadband noise sources. The frequency range of K band broadband noise source is 2232 GHz. Noise diode is used as the core device of noise source. Compared with the domestic traditional noise sources, which are mainly concentrated in low frequency and narrow band noise output, this paper will realize the higher frequency output noise signal above 22GHz, and realize the broadband noise signal output with bandwidth up to 10GHz and relative bandwidth up to 37%. First, the equivalent parameters of the noise diode are extracted; secondly, the impedance matching of the noise diode is carried out to achieve the high flatness of the noise signal and the output of the superb noise ratio; finally, the measurement of the noise source super-noise ratio and the analysis of the uncertainty are completed. The whole design is divided into three parts: low noise amplifier circuit design, noise source circuit design and noise diode parameter extraction, noise diode impedance matching and measurement of excess noise ratio. The low noise amplifier circuit is composed of power supply circuit and RF circuit which provide 3.5V and -0.5V voltage. The noise source circuit consists of a constant current source with constant output 15-25mA current, a low-pass filter with DC bias, a noise diode and an output straightening circuit. After the noise source circuit is machined and assembled, the 11s parameters of the noise source circuit are first measured by the vector network analyzer, then the corresponding 3D equivalent model of the noise source is established in HFSS, and the noise diode is equivalent to the noise diode using the RLC boundary in the HFSS. By adjusting the value of the RLC boundary in the model, the 11s parameter of the noise source simulation model is basically consistent with the 11s parameter measured by the vector network analyzer, and the high-frequency equivalent parameters of the noise diode are extracted. The noise diode impedance matching needs to divide the noise source HFSS simulation model into three parts, and import the S2P file of the three parts into ADS for simple impedance matching, and then import the matching results into HFSS for accurate simulation. Then the simulation results are imported into AutoCAD for circuit design. Finally, the noise power spectrum density of noise source amplified by low noise amplifier is measured by spectrum analyzer. The ENR, of noise source is calculated by PSD (dBm/Hz) (28) -174dBm/Hz (10) ENR. The super-noise ratio of the final output noise signal is more than 20 dB, and the flatness of the output noise signal is within 卤2dB.
【学位授予单位】:电子科技大学
【学位级别】:硕士
【学位授予年份】:2017
【分类号】:TN722.3

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