使用溅射AlN成核层实现大规模生产深紫外LED
发布时间：2018-11-09 18:26
【摘要】：高质量AlN薄膜对制造高性能深紫外器件非常重要,但是目前还很难使用大型工业MOCVD生长出高质量的AlN薄膜。采用磁控溅射制备了不同厚度的用作成核层的AlN薄膜,使用大型工业MOCVD直接在成核层上高温生长AlN外延层,研究了不同成核层对AlN外延层质量的影响。通过扫描电子显微镜和原子力显微镜对成核层AlN薄膜的表面形貌进行表征;使用高分辨X射线衍射仪对AlN外延层晶体质量进行表征,结果表明:在溅射成核层上生长的AlN外延层的晶体质量有显著提高。使用大型工业MOCVD在蓝宝石衬底上成功制备出中心波长为282 nm的可商用深紫外LED,在注入电流为20 m A时,单颗深紫外LED芯片的光输出功率达到了1.65 m W,对应的外量子效率为1.87%,饱和光输出功率达到4.31 mW。
[Abstract]:High quality AlN thin films are very important for manufacturing high performance deep ultraviolet devices, but it is very difficult to grow high quality AlN thin films with large industrial MOCVD. AlN thin films with different thickness were prepared by magnetron sputtering. AlN epitaxial layers were grown directly on the nucleated layer by large industrial MOCVD. The effect of different nucleation layers on the quality of AlN epitaxial layers was studied. The surface morphology of nucleated AlN films was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The crystal quality of AlN epitaxial layer was characterized by high resolution X-ray diffractometer. The results show that the crystal quality of AlN epitaxial layer grown on sputtering nucleated layer has been improved significantly. Commercial deep ultraviolet LED, with a center wavelength of 282 nm was successfully fabricated on sapphire substrate using large industrial MOCVD. When the injection current was 20 Ma, the optical output power of a single deep ultraviolet LED chip reached 1.65 MW. The corresponding external quantum efficiency is 1.87 and the output power of saturated light is 4.31 mW..
【作者单位】： 中国科学院半导体研究所半导体照明研发中心;
【基金】：国家自然科学基金资助项目(61334009,61474109,61306050)
【分类号】：TN312.8
本文编号：2321211
[Abstract]:High quality AlN thin films are very important for manufacturing high performance deep ultraviolet devices, but it is very difficult to grow high quality AlN thin films with large industrial MOCVD. AlN thin films with different thickness were prepared by magnetron sputtering. AlN epitaxial layers were grown directly on the nucleated layer by large industrial MOCVD. The effect of different nucleation layers on the quality of AlN epitaxial layers was studied. The surface morphology of nucleated AlN films was characterized by scanning electron microscopy (SEM) and atomic force microscopy (AFM). The crystal quality of AlN epitaxial layer was characterized by high resolution X-ray diffractometer. The results show that the crystal quality of AlN epitaxial layer grown on sputtering nucleated layer has been improved significantly. Commercial deep ultraviolet LED, with a center wavelength of 282 nm was successfully fabricated on sapphire substrate using large industrial MOCVD. When the injection current was 20 Ma, the optical output power of a single deep ultraviolet LED chip reached 1.65 MW. The corresponding external quantum efficiency is 1.87 and the output power of saturated light is 4.31 mW..
【作者单位】： 中国科学院半导体研究所半导体照明研发中心;
【基金】：国家自然科学基金资助项目(61334009,61474109,61306050)
【分类号】：TN312.8
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