不同直径张应变锗材料对光谱和晶体质量的影响

发布时间：2018-11-11 09:00

【摘要】：绝缘体上张应变锗材料是通过能带工程提高锗材料光电性能得到的一种新型半导体材料,在微电子和光电子领域具有重要的应用前景。采用微电子技术中的图形加工方法以及利用锗浓缩的技术原理,在绝缘体上硅(SOI)材料上制备了绝缘体上张应变锗材料。喇曼与室温光致发光(PL)测试结果表明,不同圆形半径的绝缘体上锗材料张应变均为0.54%。对于绝缘体上张应变锗材料,应变使其发光红移的效果强于量子阱使其发生蓝移的效果,总体将使绝缘体上张应变锗材料的直接带发光峰位红移。同时0.54%张应变锗材料的直接带发光强度随着圆形半径的增大而减弱,这主要是因为圆形半径大的样品其晶体质量较差。该材料可进一步用于制备锗微电子和光电子器件。
[Abstract]:Tensile strain germanium (GE) material on insulator is a new type of semiconductor material which can improve the photoelectric properties of germanium material by energy band engineering. It has an important application prospect in the field of microelectronics and optoelectronics. The tensile strain germanium material was prepared on silicon (SOI) material on insulator by using the graphic processing method of microelectronic technology and the principle of germanium concentration. Raman and room temperature photoluminescence (PL) measurements show that the tensile strain of germanium on insulators with different circular radius is 0.54. For the strained germanium material on insulator, the red shift effect of strain is stronger than that of quantum well, and the red shift of the direct band luminescence peak of the strained germanium material on insulator will be caused by the effect of blue shift of the strain germanium material on the insulator. At the same time, the direct band luminescence intensity of 0.54% strained germanium decreases with the increase of circular radius, which is mainly due to the poor crystal quality of samples with large circular radius. The material can be further used in the preparation of germanium microelectronic and optoelectronic devices.
【作者单位】：福建工程学院信息科学与工程学院;福建工程学院软件学院;
【基金】：国家自然科学基金资助项目(61604041) 福建省自然科学基金资助项目(2016J05147) 福建工程学院科研基金资助项目(GY-Z14073)
【分类号】：TN304

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