440GHz二倍频器研究
发布时间：2018-11-11 17:03
【摘要】：太赫兹波在成像及探测系统、物联网、通信、天文、安全检查等领域都有着重要的应用。但是由于缺乏有效的太赫兹源及高灵敏探测器,太赫兹技术的发展也因此受到限制,所以在太赫兹技术领域,频率源仍是首当其冲需要解决的问题。基于半导体技术的固态源具有性能稳定、结构简单、体积小、可靠性高、低成本等的优势,使其成为超外差接收机中本振的一种重要的选择,占据了目前太赫兹源的主要地位,是受到广泛关注的THz源。目前,世界上固态源的输出频率已突破2.7THz。本文简要介绍了太赫兹频段固态倍频器的发展动态,根据肖特基二极管的相关理论知识计算出重要参数,分析基于肖特基变容二极管对的平衡二倍频器的倍频原理和结构。在此基础上,对二倍频器的电路结构、二极管三维电磁建模、无源电路结构进行分析,利用HFSS和ADS仿真软件联合仿真,分别优化输入、输出匹配,输出过渡和直流偏置电路,开展440GHz二倍频器的研究。通过准确的三维建模,对加工和装配误差进行了量化容差分析,验证了440GHz二倍频器对加工和装配的容差度。倍频电路采用厚度为50μm的石英悬置微带电路实现,直流偏置电路采用厚度为0.127mm Rogers RT/duroid 5880微带电路实现。测试结果显示,调节偏置电压至-1V时,当输入功率为20mW时,在445.92GHz处获得最大输出功率,为39μW,在440~450GHz频段内的输出功率介于5μW至40μW之间。本课题中所积累的经验对于国内太赫兹半导体器件的研究具有实践意义。
[Abstract]:Terahertz waves have important applications in imaging and detection systems, Internet of things, communications, astronomy, security inspection and so on. However, due to the lack of effective terahertz source and high sensitivity detector, the development of terahertz technology is limited, so frequency source is still the first problem to be solved in the field of terahertz technology. The solid-state source based on semiconductor technology has the advantages of stable performance, simple structure, small volume, high reliability and low cost, which makes it an important choice of local oscillator in superheterodyne receiver and occupies the main position of terahertz source. Is a widely concerned source of THz. At present, the output frequency of solid-state source in the world has exceeded 2.7THz. This paper briefly introduces the development of terahertz solid-state frequency multiplier, calculates the important parameters according to the relevant theoretical knowledge of Schottky diode, and analyzes the doubling principle and structure of the balanced doubler based on Schottky varactor diode pair. On this basis, the circuit structure, diode 3D electromagnetic modeling, passive circuit structure of the doubler are analyzed, and the input, output matching, output transition and DC bias circuits are optimized by HFSS and ADS simulation software. The research of 440GHz doubler is carried out. Through accurate 3D modeling, the tolerance of machining and assembly error is analyzed, and the tolerance of 440GHz doubler to machining and assembly is verified. The frequency doubling circuit is realized by quartz mount microstrip circuit with thickness of 50 渭 m, and the DC bias circuit by 0.127mm Rogers RT/duroid 5880 microstrip circuit with thickness. The test results show that when the bias voltage reaches -1 V, when the input power is 20mW, the maximum output power is 39 渭 W at 445.92GHz, and the output power in 440~450GHz band is between 5 渭 W and 40 渭 W. The experience accumulated in this paper has practical significance for the research of terahertz semiconductor devices in China.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN771
本文编号：2325549
[Abstract]:Terahertz waves have important applications in imaging and detection systems, Internet of things, communications, astronomy, security inspection and so on. However, due to the lack of effective terahertz source and high sensitivity detector, the development of terahertz technology is limited, so frequency source is still the first problem to be solved in the field of terahertz technology. The solid-state source based on semiconductor technology has the advantages of stable performance, simple structure, small volume, high reliability and low cost, which makes it an important choice of local oscillator in superheterodyne receiver and occupies the main position of terahertz source. Is a widely concerned source of THz. At present, the output frequency of solid-state source in the world has exceeded 2.7THz. This paper briefly introduces the development of terahertz solid-state frequency multiplier, calculates the important parameters according to the relevant theoretical knowledge of Schottky diode, and analyzes the doubling principle and structure of the balanced doubler based on Schottky varactor diode pair. On this basis, the circuit structure, diode 3D electromagnetic modeling, passive circuit structure of the doubler are analyzed, and the input, output matching, output transition and DC bias circuits are optimized by HFSS and ADS simulation software. The research of 440GHz doubler is carried out. Through accurate 3D modeling, the tolerance of machining and assembly error is analyzed, and the tolerance of 440GHz doubler to machining and assembly is verified. The frequency doubling circuit is realized by quartz mount microstrip circuit with thickness of 50 渭 m, and the DC bias circuit by 0.127mm Rogers RT/duroid 5880 microstrip circuit with thickness. The test results show that when the bias voltage reaches -1 V, when the input power is 20mW, the maximum output power is 39 渭 W at 445.92GHz, and the output power in 440~450GHz band is between 5 渭 W and 40 渭 W. The experience accumulated in this paper has practical significance for the research of terahertz semiconductor devices in China.
【学位授予单位】：电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN771
【参考文献】
相关硕士学位论文 前1条
1 陈宁波;基于肖特基二极管的太赫兹三倍频技术研究[D];电子科技大学;2013年
，本文编号：2325549
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