基于开通密勒平台电压的IGBT模块结温估计研究

发布时间：2018-11-11 14:23

【摘要】：已有研究表明,绝缘栅双极性晶体管(insulated gate bipolar transistor,IGBT)的可靠性与结温波动密切相关,如能准确地实时测量IGBT的结温,对可靠性的研究具有重要意义。依据温敏电参数法,该文提出一种基于栅极电压开通密勒平台的结温估计方法。首先分析IGBT栅极寄生电容的物理特性与温度的关系,得到栅极开通过程中密勒平台电压与结温线性相关;然后提出采用恒流驱动电路延长栅极电压开通过程中密勒平台持续时间,使其温敏感度与温线性度更高,可拟合出密勒平台值和结温间的线性关系;最后采用该方法对IGBT模块的结温估算进行实验验证,并与采用红外测温仪实时测量的结温进行对比,验证了所提方法的可行性和准确性。
[Abstract]:It has been shown that the reliability of insulated gate bipolar transistor (insulated gate bipolar transistor,IGBT) is closely related to the junction temperature fluctuation. If the junction temperature of IGBT can be measured accurately and in real time, it is of great significance to the study of reliability. According to the method of temperature sensitive electrical parameters, this paper presents a method of junction temperature estimation based on grid voltage turn-on Miller platform. Firstly, the relationship between the physical characteristics of parasitic capacitance of IGBT gate and temperature is analyzed, and the linear correlation between the voltage of Miller platform and junction temperature is obtained. Then the constant current drive circuit is used to extend the duration of the Miller platform in the process of grid voltage opening, which makes the temperature sensitivity and temperature linearity higher, which can fit the linear relationship between Miller platform value and junction temperature. Finally, this method is used to verify the junction temperature estimation of IGBT module, and compared with that measured by infrared thermometer in real time, the feasibility and accuracy of the proposed method are verified.
【作者单位】：输配电装备及系统安全与新技术国家重点实验室(重庆大学);
【基金】：国家自然科学基金重点项目(51137006);国家自然科学基金项目(51577020)~~
【分类号】：TN322.8

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