深槽刻蚀侧壁平坦化技术
发布时间：2018-11-12 19:09
【摘要】：介绍了一种博世(Bosch)工艺深槽刻蚀后的侧壁平坦化技术。优化深槽刻蚀工艺参数使侧壁扇贝褶皱的尺寸降低至约52 nm,然后在1 100℃炉管中热氧化生长100 nm牺牲氧化层,再用HF酸漂洗工艺去除牺牲氧化层得到完全光滑的侧壁形貌。研究表明,扇贝褶皱的底部沿100晶向氧化,而顶部沿110晶向氧化的矢量叠加方向。当热氧生长厚度较薄时,氧化行为倾向于线性氧化,由于线性氧化的速率常数强烈依赖晶向取向,因此氧化一定时间后,顶部的氧化深度与底部的氧化深度达到一致。基于上述氧化机制,Si/Si O2界面变得平滑陡直。
[Abstract]:This paper introduces a technique of flattening side wall after deep groove etching in Bosch (Bosch) process. By optimizing the deep groove etching process parameters, the size of sidewall scallop fold was reduced to about 52 nm, then 100 nm sacrificial oxidation layer was grown by thermal oxidation in 1 100 鈩，
本文编号：2327958
[Abstract]:This paper introduces a technique of flattening side wall after deep groove etching in Bosch (Bosch) process. By optimizing the deep groove etching process parameters, the size of sidewall scallop fold was reduced to about 52 nm, then 100 nm sacrificial oxidation layer was grown by thermal oxidation in 1 100 鈩，
本文编号：2327958
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