有机薄膜晶体管栅绝缘层的研究

发布时间：2018-11-14 08:22

【摘要】：目前国内外关于有机绝缘层制备的研究报道较多,但是针对ITO对有机薄膜的性能影响的研究较少。本课题在ITO基底上制备了两种有机绝缘层,并对绝缘层的表面形貌、电学特性和漏电机理进行了研究。首先使用苯膦酸对ITO进行表面修饰,测量ITO的表面粗糙度和亲疏水性变化;然后在ITO基底上用旋涂的方法制备PMMA与PVP绝缘层,检测ITO修饰对PMMA与PVP表面形貌和电学特性的影响;旋涂不同分子量的PMMA与不同交联剂质量分数的PVP薄膜,分析分子量对PMMA绝缘层的影响和交联剂质量分数对PVP绝缘层的影响,并从漏电机理方面进行探讨。研究结果表明,ITO修饰时间为2h时得到最佳的ITO表面,且ITO经过修饰后PMMA与PVP绝缘层薄膜表面粗糙度、漏电流均减小,电学性能趋于稳定。不同分子量的PMMA薄膜的漏电机理基本相同:在0-6V、6-10V、10-15V的电压变化范围内,主要漏电机理分别为普尔-弗朗克效应、肖特基发射、空间电荷限制电流。PVP与PMF质量分数均为5%时可以得到质量更好绝缘层薄膜,漏电流较小,可靠性较高。交联剂质量分数为3%、5%、7%的PVP薄膜漏电机制分别在10.3V、10.8V、10V时由普尔-弗朗克效应转变为肖特基发射效应。本工作中制备的PMMA与PVP绝缘层表面粗糙度较小,成膜质量较好;漏电流在10-8A/cm2数量级,分子量为350k的PMMA薄膜的单位面积电容达到10.75nF/cm2,PVP与交联剂质量分数均为5%的PVP薄膜单位面积电容达到19.0nF/cm2,且电学性能稳定,可以用于实现高性能OTFT等有机光电器件。
[Abstract]:There are many reports on the preparation of organic insulating layer at home and abroad, but the effect of ITO on the performance of organic film is less studied. In this paper, two kinds of organic insulating layers were prepared on ITO substrates, and the surface morphology, electrical properties and leakage mechanism of the insulating layers were studied. The surface roughness and hydrophobicity of ITO were measured by using phenylphosphonic acid, then the insulators of PMMA and PVP were prepared by spin-coating method on the ITO substrate, and the effect of ITO modification on the surface morphology and electrical properties of PMMA and PVP was investigated. The influence of molecular weight on PMMA insulating layer and the influence of crosslinking agent mass fraction on PVP insulating layer were analyzed by spin-coating PVP film with different molecular weight and different crosslinking agent mass fraction, and the mechanism of leakage was discussed. The results show that the optimal ITO surface is obtained when the ITO modification time is 2 h, and the surface roughness, leakage current and electrical properties of the PMMA and PVP insulator films modified by ITO are decreased and the electrical properties tend to be stable. The leakage mechanism of PMMA thin films with different molecular weights is basically the same: in the voltage range of 0-6V ~ (6-10) V ~ (10) V ~ (10 ~ (-15) V), the main leakage mechanism is Poor-Frank effect and Schottky emission, respectively. When the mass fraction of PVP and PMF is 5, the insulating film with better quality can be obtained, the leakage current is smaller and the reliability is higher. The leakage mechanism of PVP films with a mass fraction of 3 and 5% of crosslinker changed from Poor-Frank effect to Schottky emission effect at 10.3V ~ (10.8) V ~ (10) V, respectively. In this work, the surface roughness of PMMA and PVP insulating layer is smaller and the quality of film is better. The leakage current is in the order of 10-8A/cm2. The unit area capacitance of PMMA film with molecular weight of 350 k is 10.75nF / cm2PVP and the unit area capacitance of PVP film with 5% mass fraction of crosslinking agent is 19.0nF / cm2, and the electrical property is stable. It can be used to realize high performance OTFT and other organic optoelectronic devices.
【学位授予单位】：河北工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN321.5

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