抛光工艺对硅片表面Haze值的影响

发布时间：2018-11-17 18:34

【摘要】：随着超大规模集成电路的快速发展,硅片表面的Haze值对于现代半导体器件工艺的影响也越来越受到人们的重视。通过实验研究了精抛光工艺参数对硅片表面Haze值的影响规律。结果表明,随着抛光时间的延长,硅的去除量逐渐增大,硅片表面Haze值逐渐降低;同时抛光过程中机械作用与化学作用的协同作用对Haze值也有较大影响。随着抛光液温度的降低与抛光液体积流量的减小,化学作用减弱,硅片表面Haze值逐渐减小。而随着抛光压力的增大,机械作用逐渐起主导作用,硅片表面Haze值逐渐降低。但当Haze值降低到某一数值后,随着硅去除量的增大、抛光液温度的下降、抛光液体积流量的降低、抛光压力的增大,硅片表面的Haze值基本保持不变。
[Abstract]:With the rapid development of VLSI, more and more attention has been paid to the influence of the Haze value on the modern semiconductor device process. The effect of finishing process parameters on the surface Haze value of silicon wafer was studied experimentally. The results show that with the prolongation of polishing time, the removal amount of silicon increases and the Haze value of silicon wafer decreases gradually, and the synergistic effect of mechanical and chemical action on Haze value is also significant. With the decrease of the polishing temperature and the volume flow of the polishing liquid, the chemical action is weakened, and the Haze value of the wafer surface decreases gradually. With the increase of polishing pressure, mechanical action gradually plays a leading role, and the Haze value of silicon wafer surface decreases gradually. However, when the Haze value is reduced to a certain value, with the increase of the silicon removal amount, the temperature of the polishing liquid, the volume flow rate of the polishing fluid and the polishing pressure increase, the Haze value on the surface of the silicon wafer remains basically unchanged.
【作者单位】：有研半导体材料有限公司;
【基金】：国家科技重大专项资助项目(2008ZX02401)
【分类号】：TN305.2

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