功率IGBT驱动电路设计
发布时间：2018-11-28 15:25
【摘要】：因为IGBT兼具MOSFET压控门级驱动特性和双极型晶体管的大电流、低导通压降特性而被广泛应用于中高功率、中低频率变流器中。为了提供低压控制信号端和功率端的电气隔离以及保证IGBT工作过程中所需的电流、电压,低成本、高可靠性的门级驱动电路就十分重要。基于与公司合作的智能功率模块项目,本文设计了一种基于华润上华高压BCD工艺的双通道半桥驱动芯片,该芯片可靠性高、电流输出能力强、工作频率高。根据实际应用需求以及IGBT安全工作对驱动电路参数的要求,本文设计的驱动芯片参数指标为:输入接口兼容3.3V/5V CMOS/TTL信号;输出驱动电压幅值为15V;输出驱动电流为±1A;正常工作电压范围为13.5~16.5V;工作温度为-40~125℃;最高工作频率为100kHz;芯片采用15V单电源供电;高低通道信号传输时间差小于50ns。同时芯片内部集成了高低通道电源欠压保护电路、短路保护电路、过温保护电路以及错误逻辑控制电路,这些保护电路可有效保证电路在使用中的安全。本文首先根据IGBT的工作特性和实际应用需求确定了芯片的参数指标,介绍了驱动芯片的整体结构和工作原理。然后重点对驱动芯片中部分子电路包括电压基准源电路、输入接口电路、欠压保护电路、高压电平位移电路、低端延时电路进行了详细的分析和设计,并运用Hspice仿真软件对各子电路进行参数仿真和功能仿真。在验证了各子电路满足指标要求后,搭建了芯片整体仿真环境,验证了瞬态功能、自举电路功能、保护功能的正确性和芯片参数的准确性。
[Abstract]:IGBT is widely used in medium and high power and low frequency converters because of the characteristics of MOSFET voltage-gate drive and bipolar transistors with high current and low on-voltage drop. In order to provide the electrical isolation between the low-voltage control signal and the power end, and to ensure the current, voltage, low cost and high reliability of the gate drive circuit needed in the IGBT operation process, it is very important. Based on the intelligent power module project, this paper designs a dual-channel half-bridge drive chip based on China Resources High Voltage BCD process. The chip has high reliability, strong current output ability and high working frequency. According to the requirements of practical application and the requirements of IGBT security to drive circuit parameters, the parameters of the driver chip designed in this paper are as follows: input interface compatible with 3.3V/5V CMOS/TTL signal, output driving voltage amplitude of 15V; The output driving current is 卤1A, the normal operating voltage range is 13.5V / 16.5 V, the working temperature is -400.125 鈩，
本文编号：2363280
[Abstract]:IGBT is widely used in medium and high power and low frequency converters because of the characteristics of MOSFET voltage-gate drive and bipolar transistors with high current and low on-voltage drop. In order to provide the electrical isolation between the low-voltage control signal and the power end, and to ensure the current, voltage, low cost and high reliability of the gate drive circuit needed in the IGBT operation process, it is very important. Based on the intelligent power module project, this paper designs a dual-channel half-bridge drive chip based on China Resources High Voltage BCD process. The chip has high reliability, strong current output ability and high working frequency. According to the requirements of practical application and the requirements of IGBT security to drive circuit parameters, the parameters of the driver chip designed in this paper are as follows: input interface compatible with 3.3V/5V CMOS/TTL signal, output driving voltage amplitude of 15V; The output driving current is 卤1A, the normal operating voltage range is 13.5V / 16.5 V, the working temperature is -400.125 鈩，
本文编号：2363280
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