基于变量分离分解法的极紫外光刻三维掩模快速仿真方法

发布时间：2018-11-28 15:24

【摘要】：提出了一种基于分离变量法的极紫外光刻三维掩模衍射谱快速仿真方法,在保证一定仿真精度的前提下提高了仿真速度。该方法将三维掩模分解为2个相互垂直的二维掩模,对2个二维掩模采用严格电磁场方法进行衍射谱仿真并将结果相乘以重构成三维衍射谱。以6°主入射角、45°线偏振光照明及22nm三维方形接触孔掩模为例,在入射光方位角0°~90°变化范围内,相同仿真参数下,该方法的仿真结果与商用光刻仿真软件Dr.LiTHO的严格仿真结果相比,图形特征尺寸误差小于0.21nm,仿真速度提高约65倍。在上述参数下,该方法与Dr.LiTHO的域分解方法及基于掩模结构分解法等快速方法相比,仿真精度和速度均提高1倍以上。该模型无需参数标定,适用于矩形图形的三维掩模快速仿真。
[Abstract]:A fast simulation method for 3D mask diffraction spectrum of extreme ultraviolet lithography based on the method of separating variables is proposed. The simulation speed is improved on the premise of ensuring certain simulation accuracy. In this method, the 3D mask is decomposed into two two-dimensional masks which are perpendicular to each other. The diffraction spectra of the two masks are simulated by the strict electromagnetic field method and the results are multiplied to form the three-dimensional diffraction spectra. Taking 6 掳main incident angle, 45 掳line polarized light illumination and 22nm 3D square contact hole mask as examples, under the same simulation parameters, the azimuth angle of incident light varies from 0 掳to 90 掳. Compared with the strict simulation results of commercial lithography software Dr.LiTHO, the simulation results show that the error of graphic feature dimension is less than 0.21 nm, and the simulation speed is about 65 times higher. Compared with the Dr.LiTHO domain decomposition method and the mask structure decomposition method, the simulation accuracy and speed of the method are more than twice as high. The model does not need parameter calibration and is suitable for 3D mask simulation of rectangular graphics.
【作者单位】：中国科学院上海光学精密机械研究所信息光学与光电技术实验室;中国科学院大学;
【基金】：国家自然科学基金(61474129)
【分类号】：TN305.7

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