基于硫杂环萘二酰亚胺的n型有机场效应晶体管器件的设计、制备与性能研究

发布时间：2018-11-28 18:00

【摘要】：有机场效应晶体管(OFET)由于在制备低成本、重量轻在柔性的电子器件中有着广阔的应用前景,引起了人们极大的研究热情。尽管如此,有机光电材料的发展仍面临诸多问题,就有机场效应晶体管而言,目前高性能的薄膜器件多依赖含氯溶剂的成膜工艺。含氯溶剂具有生殖毒性,可以催化臭氧层分解,也给废液处理带来问题。因此发展环境友好的非氯溶剂加工的器件对于有机场效应晶体管大规模生产至关重要。此外,有源层和金属电极之间的接触势垒可以显著影响载流子注入,采用不同金属电极或在金属表面修饰单分子层是改变金属功函数和有机分子电极上的薄膜形貌的常用策略。本论文使用不同的非氯溶剂溶液加工了硫杂环萘二酰亚胺类n型半导体分子(NDI3HU-DTYM2),并研究了不同电极和单分子修饰层对器件性能的影响。主要分为以下两个方面:1.使用几种常见的非氯溶剂制备基于NDI3HU-DTYM2的n型OFET器件。使用旋涂和滴膜两种成膜方法,研究了不同溶剂对薄膜形貌,结晶性的影响。使用甲苯作为溶剂旋涂和使用1,3,5-三甲苯滴膜都可以在空气中测得OFET器件电子迁移率大于1 cm2 V-1 s-1。并分析了添加不同高沸点溶剂对薄膜形貌和器件性能的影响。2.以NDI3HU-DTYM2为有源层,以金、银、铬-金为电极制备了一系列场效应晶体管器件,研究了电极功函数对器件性能的影响。合成了新型的硫醇类单分子自组装修饰剂1,1-二氰基乙烯-2,2-二硫醇(DCDT)。使用五氟苯硫酚(PFBT)、DCDT修饰的金电极与未修饰的金电极的器件作对比。使用DCDT修饰金电极的底栅底接触器件性能(迁移率)是未修饰金电极的器件的2倍。使用PFBT修饰金电极后器件性能显著降低,这与修饰后升高了电极的功函数升高从而提高了注入势垒有关。
[Abstract]:Because of its wide application prospect in low cost fabrication and light weight in flexible electronic devices, (OFET) with airfield effect transistor has aroused great enthusiasm. However, the development of organic optoelectronic materials still faces many problems. As far as the airport effect transistors are concerned, the current high performance thin film devices rely on the film forming process with chlorine solvent. Chlorinated solvents are reproductive toxic, catalyze the decomposition of ozone layer, and bring problems to the treatment of waste liquid. Therefore, the development of environmentally friendly non-chlorinated solvent-processing devices is essential for mass production of airfield effect transistors. In addition, the contact barrier between the active layer and the metal electrode can significantly affect the carrier injection. Different metal electrodes or modified monolayers on the metal surface are the common strategies to change the metal work function and the morphology of the film on the organic molecular electrode. In this paper, n-type thio-heterocyclic naphthalimide (NDI3HU-DTYM2) semiconductor molecules were fabricated in different non-chlorinated solvent solutions, and the effects of different electrodes and monolayer modified layers on the properties of the devices were investigated. Mainly divided into the following two aspects: 1. N-type OFET devices based on NDI3HU-DTYM2 are fabricated using several common non-chlorine solvents. The effects of different solvents on the morphology and crystallinity of the films were studied by spin-coating and trickle film formation methods. The electron mobility of OFET devices can be measured in air by using toluene as solvent spin-coating and trimethylbenzene dripping film. The electron mobility of OFET device is more than 1 cm2 V-1 s-1. The effects of different high boiling solvents on the film morphology and device properties were analyzed. 2. A series of field-effect transistor devices were fabricated using NDI3HU-DTYM2 as active layer and gold, silver, chromium and gold as electrodes. The effect of electrode work function on the performance of the devices was studied. A new monolayer of mercaptan (DCDT). Was synthesized, I. E. 1-dicyanoethylene-2-dimercaptan (DCDT). The (PFBT), DCDT modified gold electrode with pentafluorophenol was compared with the unmodified gold electrode. The performance (mobility) of bottom gate bottom contactor with DCDT modified gold electrode is twice as high as that of unmodified gold electrode. The performance of the PFBT modified gold electrode decreases significantly, which is related to the increase of the work function of the modified electrode and the increase of the injection barrier.
【学位授予单位】：上海大学
【学位级别】：硕士
【学位授予年份】：2016
【分类号】：TN386

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