利用扫描开尔文探针显微镜观察薄膜光电器件能级排布

发布时间：2018-12-08 19:02

【摘要】：薄膜光电器件的能级结构直接决定了载流子的产生、分离、传输、复合和收集等微观动力学过程,从而决定了器件性能。因此准确获取器件能级结构,是深入理解器件工作机制、推动器件技术革新的重要科学依据。此专论系统地介绍了本课题组利用扫描开尔文探针显微镜(SKPM)表征薄膜光电器件如有机太阳能电池、有机-无机钙钛矿光探测器等器件中界面能级结构的工作。垂直型薄膜器件中的活性材料层被顶电极与底电极封闭,通常难以直接在器件工况下测量其中的界面能级排布,我们发展了横截面SKPM技术来解决这一难题。研究表明,界面层是调控器件能级结构、决定器件极性、提高器件性能的重要手段。本文介绍的表征技术有望在各种薄膜光电器件,诸如光伏器件、光探测器、发光二极管,尤其是各种叠层构型器件的研究中展现出广阔的应用前景。
[Abstract]:The energy level structure of thin film optoelectronic devices directly determines the generation, separation, transmission, recombination and collection of carriers, and thus determines the performance of the devices. Therefore, it is an important scientific basis to understand the working mechanism of the device and to promote the technological innovation of the device by accurately obtaining the energy level structure of the device. This monograph systematically introduces the work of our team to characterize the interface energy level structure of thin film photovoltaic devices such as organic solar cells and organic-inorganic perovskite photodetectors by scanning Kelvin probe microscope (SKPM). The active material layer in vertical thin film devices is closed by the top electrode and the bottom electrode, so it is difficult to directly measure the interface energy level arrangement in the device operating condition. We have developed the cross section SKPM technology to solve this problem. It is shown that the interface layer is an important means to regulate the energy level structure, determine the device polarity and improve the device performance. The characterization techniques introduced in this paper are expected to be widely used in the research of thin film photovoltaic devices, such as photovoltaic devices, photodetectors, light-emitting diodes, especially various laminated devices.
【作者单位】：中国科学院苏州纳米技术与纳米仿生研究所国际实验室中国科学院纳米科学卓越中心;中国科学院大学;中国科学技术大学化学系;
【基金】：国家自然科学基金(21625304,51473184,11504408) 中国科学技术部重点研发计划(2016YFA0200703) 中国科学院科研装备研制项目(YZ201654)资助~~
【分类号】：TN15

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