面发射分布反馈半导体激光器的关键技术研究

发布时间：2018-12-09 14:41

【摘要】：面发射分布反馈半导体激光器是一种通过采用F-P腔进行激光增益振荡并借助二阶光栅一级衍射实现表面出光的高功率、高光束质量、窄线宽、低温漂的半导体激光器。制备工艺简单、工作性能优良且稳定等优点使其在激光雷达、激光探测、信息处理、激光工业加工等众多领域具有广阔的应用前景。本文主要对面发射分布反馈半导体激光器结构设计及工艺制备过程中涉及的关键技术进行了研究。1.对面发射分布反馈半导体激光器的国内外发展现状进行了调研及全面分析,并就其进一步工作内容做出了讨论和展望。2.对面发射分布反馈激光器出光口的设计及制备提出了两种具体的可行方案,并就其方案结构进行了设计、优化及分析。两种方案结构(单层氧化铪增透膜和亚波长抗反射光栅)均满足器件的应用要求(透射率99.4%)。3.对面发射分布反馈激光器实现垂直出光功能的内部关键结构——二阶衍射光栅进行了初步计算及制作,获得周期分别为300nm和450nm,脊高分别为185nm和200nm的光栅并摸索出完整的制作工艺步骤。4.探索研究了外腔各元件(内谐振腔输出端面、分光板以及光栅)对复合外腔半导体激光器阈值增益的影响。结合对复合外腔的整体分析,探究了复合外腔激光器进一步优化的可能。
[Abstract]:The surface emission distributed feedback semiconductor laser is a kind of semiconductor laser with high power, high beam quality, narrow linewidth and low temperature drift by using F-P cavity for laser gain oscillation and second-order grating first order diffraction. The advantages of simple preparation process, excellent performance and stability make it have a broad application prospect in many fields such as laser radar, laser detection, information processing, laser industrial processing and so on. In this paper, the key techniques involved in the structure design and fabrication process of the facet emitting distributed feedback semiconductor laser are studied. 1. In this paper, the current situation of the development of facet emitting distributed feedback semiconductor lasers at home and abroad is investigated and comprehensively analyzed, and its further work is discussed and prospected. 2. Two feasible schemes for the design and fabrication of the optical outlet of a facet distributed feedback laser are proposed, and the scheme structure is designed, optimized and analyzed. Both schemes (single layer hafnium oxide antireflection film and subwavelength anti-reflection grating) meet the requirements of device application (transmittance 99.4%). The second order diffraction grating, which is the internal key structure of the vertical light output, is calculated and fabricated. The periods are 300nm and 450 nm, respectively. The raster with ridge height of 185nm and 200nm were groped out. 4. 4. The effects of external cavity elements (internal cavity output end face, splitter and grating) on the threshold gain of a compound external cavity semiconductor laser are investigated. Combined with the overall analysis of the complex external cavity, the possibility of further optimization of the compound external cavity laser is explored.
【学位授予单位】：长春理工大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN248.4

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