SOI基CMOS RCE光电探测器结构与特性研究

发布时间：2018-12-10 15:15

【摘要】：近年来,光互连技术以高速、高带宽、低串扰和低功耗等优势备受关注,尤其是在甚短距离光传输领域中。CMOS集成电路及工艺平台推动了硅基光电探测器、CMOS光接收电路乃至集成光系统的发展,高速高灵敏度的850nm光波长CMOS光电探测器结构及模型成为实施甚短距离光互连的关键之一。因此,研究SOI CMOS兼容的高性能的光电探测器,及其相关工艺、制造,具有非常重要的现实意义。本文以SOI CMOS工艺为载体,提出可用于850nm波长光电集成电路(OEIC)的高速高灵敏度低成本的SOI基谐振腔增强型(Resonant Cavity Enhanced Photodetector:RCE)光电探测器结构,对光电探测器的工艺实现、器件结构、软件仿真及版图设计等方面展开研究工作。主要的研究工作及创新点如下:1、提出了一种新的SOI基CMOS谐振腔增强型光电探测器结构,以0.5μmCMOS工艺为工艺流程载体,给出优化的SOI基光电探测器结构参数,力求解决硅基光电探测器量子效率低和工作带宽窄的问题;2、研究SOI基光电探测器的光电转换机理及载流子特性,建立精确的谐振腔增强型光电探测器模型,对器件所用到的Si片材料、谐振腔的DBR反射镜以及整体结构等作了研究和分析,实现模型与物理结构尺寸之间的可缩放性映射。并基于MATLAB与TCAD软件进行数值模型仿真与工艺仿真的结果进行对比;3、考察SOI基谐振腔增强型光电探测器物理尺寸多维变化对其性能的影响,将顶部有“网格状有源区”结构、“条栅状有源区”结构加入DBR反射镜的分析和设计中,通过优化设计出光纤通信用SOI基CMOS RCE光电探测器;4、设计了多种SOI基CMOS RCE光电探测器的版图设计,包括三种面积尺寸30μm*30μm、40μm*40μm、50μm*50μm结构,两种有源区结构:条栅型的P+结构、网格型的N+结构,以及4种有源区间距0.8μm、0.9μm、1.0μm、1.1μm结构,因此共有24个不同光电探测器结构。通过全文的研究,以及TCAD仿真和MATLAB仿真对比分析,结果表明SOI基CMOS RCE光电探测器的正确性,相比于普通CMOS光电探测器,其量子效率提高了100%。另外与现有CMOS工艺兼容,也降低了生产难度及成本。本文的研究工作为今后进一步RCE光电探测器的研究及生产积累了一定的技术经验,通过系统的分析RCE光电探测器的研发流程,为其研究及量产打下了基础。
[Abstract]:In recent years, optical interconnection technology has attracted much attention due to its advantages of high speed, high bandwidth, low crosstalk and low power consumption, especially in the field of very short distance optical transmission. Silicon based photodetectors are promoted by CMOS integrated circuits and process platforms. With the development of CMOS optical receiving circuit and even integrated optical system, the structure and model of 850nm optical wavelength CMOS photodetector with high speed and high sensitivity have become one of the key issues in the implementation of very short distance optical interconnection. Therefore, it is of great practical significance to study the high performance photodetectors compatible with SOI CMOS, and their related processes and fabrication. In this paper, a high speed, high sensitivity and low cost SOI based resonant cavity enhanced (Resonant Cavity Enhanced Photodetector:RCE (Resonant Cavity Enhanced Photodetector:RCE) photodetector structure, which can be used in 850nm wavelength photoelectric integrated circuit (OEIC), is proposed, and the process of the photodetector is realized. Research work on device structure, software simulation and layout design is carried out. The main research works and innovations are as follows: 1. A new SOI based CMOS cavity enhanced photodetector structure is proposed. The optimized structure parameters of the SOI based photodetector are given with 0.5 渭 mCMOS process as the process flow carrier. To solve the problems of low quantum efficiency and narrow working band of silicon based photodetectors; 2. The photoelectric conversion mechanism and carrier characteristics of SOI based photodetectors are studied, and an accurate resonant cavity enhanced photodetector model is established. The Si chip materials used in the devices are investigated. The DBR mirror and the whole structure of the resonator are studied and analyzed to realize the scalable mapping between the model and the physical structure size. The results of numerical model simulation and process simulation based on MATLAB and TCAD are compared. 3. The effect of the multi-dimensional change of physical dimension on the performance of SOI based resonant cavity enhanced photodetector is investigated. The "grid active zone" structure and the "strip gate active zone" structure are added to the analysis and design of the DBR mirror. By optimizing the design of SOI based CMOS RCE photodetector for optical fiber communication; 4. A variety of SOI based CMOS RCE photodetectors are designed, including three kinds of area sizes: 30 渭 m (30 渭 m), 40 渭 m (40 渭 m), 50 渭 m (50 渭 m), two kinds of active region structures: strip gate P structure, grid type N structure, and so on. And four kinds of active region spacing 0.8 渭 m ~ 0.9 渭 m ~ (-1) 渭 m structure, so there are 24 different structures of photodetector. The results show that the SOI based CMOS RCE photodetector is correct and its quantum efficiency is 100% higher than that of the ordinary CMOS photodetector. In addition, compatible with the existing CMOS process, it also reduces the production difficulty and cost. The research work in this paper has accumulated certain technical experience for the further research and production of RCE photodetectors in the future. Through the systematic analysis of the R & D flow of RCE photodetectors, it has laid a foundation for its research and mass production.
【学位授予单位】：杭州电子科技大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN15

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