基于结构函数的IGBT热特性研究
发布时间：2018-12-12 20:42
【摘要】：根据绝缘栅双极型晶体管(IGBT)器件工作时的传热原理,运用基于有限元法的分析软件ANSYS建立了1种IGBT三维热模型,进行瞬态仿真及结构函数分析。基于结构函数分析所得的热阻热容曲线,从芯片和焊料层接触面积、焊料层厚度、铜基板厚度和焊料层空洞等角度分析了可能影响器件热特性的因素。研究结果表明,相比传统的半导体器件热阻测试方法,结构函数法不仅能获得器件结到周围环境总体热阻值,还能无损地获取器件内部各结构层的热阻热容,分析器件内部结构变化,为研究和评估器件的热特性提供可靠的依据。
[Abstract]:According to the heat transfer principle of insulated gate bipolar transistor (IGBT) devices, a three-dimensional thermal model of IGBT is established by using the finite element analysis software ANSYS, and the transient simulation and structure function analysis are carried out. Based on the thermal resistance and heat capacity curves obtained by structural function analysis, the factors that may affect the thermal characteristics of the device are analyzed from the aspects of the contact area of chip and solder layer, the thickness of copper substrate and the solder layer cavity. The results show that compared with the traditional thermal resistance measurement method, the structure function method can not only obtain the total thermal resistance of the device junction to the surrounding environment, but also obtain the thermal resistance and heat capacity of each structure layer of the device without damage. The analysis of the internal structure of the device provides a reliable basis for the study and evaluation of the thermal characteristics of the device.
【作者单位】： 北京工业大学电子信息与控制工程学院;
【分类号】：TN322.8
[Abstract]:According to the heat transfer principle of insulated gate bipolar transistor (IGBT) devices, a three-dimensional thermal model of IGBT is established by using the finite element analysis software ANSYS, and the transient simulation and structure function analysis are carried out. Based on the thermal resistance and heat capacity curves obtained by structural function analysis, the factors that may affect the thermal characteristics of the device are analyzed from the aspects of the contact area of chip and solder layer, the thickness of copper substrate and the solder layer cavity. The results show that compared with the traditional thermal resistance measurement method, the structure function method can not only obtain the total thermal resistance of the device junction to the surrounding environment, but also obtain the thermal resistance and heat capacity of each structure layer of the device without damage. The analysis of the internal structure of the device provides a reliable basis for the study and evaluation of the thermal characteristics of the device.
【作者单位】： 北京工业大学电子信息与控制工程学院;
【分类号】：TN322.8
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