新型铜互连阻挡层材料Co的CMP研究

发布时间：2018-12-13 13:03

【摘要】：Co基扩散阻挡层对Cu具有良好的扩散阻挡性和粘附性,具有被应用于下一代铜互联阻挡层的潜力。但目前关于Co材料的化学机械抛光研究非常缺乏,对于Co抛光中存在的静态腐蚀、化学腐蚀、抛光机理等科学问题和实际的抛光工艺缺乏研究。因此本论文工作对科学研究和实际应用都有非常重要的意义。论文首先从传统的阻挡层材料Ta入手,系统的研究了河北工业大学自主研发的碱性阻挡层抛光液中的氧化剂、螯合剂以及添加剂等各组分,对静态腐蚀速率、抛光速率及表面粗糙的影响。发现在强碱性抛光液中,Ta抛光速率很大程度上依赖于Ta发生化学反应的速率。实验证明,添加盐酸胍能增强Ta抛光速率。在研究传统阻挡层材料Ta的基础上分析三个因素对阻挡层新材料Co的影响。观察抛光液各组分对静态腐蚀速率、抛光去除速率及电化学的影响。通过分析静态条件下的数据,选出满足条件的抛光液组分进行CMP实验,观察Co抛光速率的变化,最后做电化学实验,从化学角度解释去除速率。为了提高速率在抛光液中添加氧化剂及盐酸胍。实验表明当活性剂为30ml/L、螯合剂为20ml/L时,Co的静态腐蚀速率最低;当添加30ml/L氧化剂及0.3g/L盐酸胍后,Co的抛光速率由急剧增大,与现存的阻挡层抛光液对比,此阻挡层抛光液对Co有更高的去除速率,且静态腐蚀较小。此论文对阻挡层CMP研究提供了积极的指导意义。
[Abstract]:The diffusion barrier layer based on Co has good diffusion barrier and adhesion to Cu and has the potential to be used in the next generation copper interconnecting barrier layer. However, the research on the chemical mechanical polishing of Co materials is very scarce, and the scientific problems such as static corrosion, chemical corrosion, polishing mechanism and the actual polishing process in Co polishing are not studied. Therefore, the work of this paper is of great significance to scientific research and practical application. Firstly, starting with the traditional barrier material Ta, the paper systematically studied the static corrosion rate of oxidant, chelating agent and additive in alkaline barrier polishing liquid developed by Hebei University of Technology. The effect of polishing rate and surface roughness. It is found that the polishing rate of Ta depends largely on the reaction rate of Ta in strong alkaline polishing solution. The experiment shows that the addition of guanidine hydrochloride can increase the polishing rate of Ta. Based on the study of the traditional barrier material Ta, the influence of three factors on the new barrier layer material Co was analyzed. The effects of various components of polishing liquid on static corrosion rate, polishing removal rate and electrochemistry were observed. By analyzing the data under the static condition, the CMP experiment was carried out by selecting the polishing liquid component which satisfied the conditions. The change of the Co polishing rate was observed. Finally, the electrochemical experiment was done to explain the removal rate from the chemical point of view. In order to increase the rate of addition of oxidant and guanidine hydrochloride in polishing solution. The experimental results show that when the active agent is 30ml / L and the chelating agent is 20ml/L, the static corrosion rate of Co is the lowest. When 30ml/L oxidant and 0.3g/L guanidine hydrochloride were added, the polishing rate of Co increased sharply. Compared with the existing barrier polishing liquid, the Co polishing liquid had higher removal rate of Co and less static corrosion. This paper provides positive guidance for the study of barrier layer CMP.
【学位授予单位】：河北工业大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN305.2

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