金属硅高温造渣除硼工艺的研究
发布时间：2018-12-13 11:02
【摘要】：本文的研究目的是探索和改进低成本冶金物理法太阳能级多晶硅的制备工艺，并提出了一种基于氧化物高温固相反应的造渣萃取除硼的金属硅提纯方法，该方法在传统的金属硅“造渣法”提纯技术的基础上，主要通过Al2O3与SiO2或MgO之间能够在高温下发生固相反应分别生成莫来石或尖晶石，同时其反应速度可通过原材料晶体结构和微观形貌的选择或者通过添加其它氧化物达到可控性的特点，实现可控性的高温固相反应。固相反应过程中，反应产物的各组份原子重新排列形成新的晶格，由于B具有极小的原子半径，熔融的液态硅中B杂质极易进入该晶格的间隙位中，因此本方法对去除金属硅中的B杂质有较显著的效果，同时对其它杂质也有良好的去除效果。本方法具有成本低廉、操作简单的特点。
[Abstract]:The purpose of this paper is to explore and improve the preparation process of solar-grade polysilicon by low-cost metallurgical physical method, and to propose a method of metal silicon purification by slag extraction and removal of boron based on high temperature solid state reaction of oxide. Based on the traditional "slag forming method" of metal silicon, mullite or spinel can be formed by solid state reaction between Al2O3 and SiO2 or MgO at high temperature. At the same time, the reaction rate can be controlled by selecting the crystal structure and microstructure of raw materials or by adding other oxides to achieve controllability. In the process of solid state reaction, the atoms of each component of the product rearrange to form a new lattice. Because B has a very small atomic radius, B impurities in molten liquid silicon can easily enter the gap potential of the crystal lattice. Therefore, this method has remarkable effect on removing B impurity in metal silicon, and also has good effect on other impurity removal. The method has the characteristics of low cost and simple operation.
【学位授予单位】：南昌大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304.12
本文编号：2376429
[Abstract]:The purpose of this paper is to explore and improve the preparation process of solar-grade polysilicon by low-cost metallurgical physical method, and to propose a method of metal silicon purification by slag extraction and removal of boron based on high temperature solid state reaction of oxide. Based on the traditional "slag forming method" of metal silicon, mullite or spinel can be formed by solid state reaction between Al2O3 and SiO2 or MgO at high temperature. At the same time, the reaction rate can be controlled by selecting the crystal structure and microstructure of raw materials or by adding other oxides to achieve controllability. In the process of solid state reaction, the atoms of each component of the product rearrange to form a new lattice. Because B has a very small atomic radius, B impurities in molten liquid silicon can easily enter the gap potential of the crystal lattice. Therefore, this method has remarkable effect on removing B impurity in metal silicon, and also has good effect on other impurity removal. The method has the characteristics of low cost and simple operation.
【学位授予单位】：南昌大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN304.12
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