可双向导通的凹栅隧穿晶体管
发布时间：2018-12-18 05:39
【摘要】：传统的隧穿晶体管由于自身结构的不对称性使其只有单向电流通路,造成了电路设计的诸多不便.以改善这一缺陷为目的,设计了一种新型的具有双向电流通路的高性能凹栅隧穿晶体管,并通过silvaco TCAD软件仿真的方法,对该新型晶体管的性能进行了验证.分析了器件的掺杂、尺寸等工艺参数对其能带及性能的影响机制.结果表明,该器件在0.5V驱动电压下获得了5×106的开关比,最小亚阈值摆幅仅为12mV/dec.总的来说,该器件在低驱动电压下具有较大的开关比以及非常陡峭的亚阈值曲线斜率,适用于超低功耗设计应用.
[Abstract]:Because of the asymmetry of its own structure, the traditional tunneling transistor has only one way current path, which causes many inconvenience in circuit design. In order to improve this defect, a novel high performance concave gate tunneling transistor with bidirectional current path is designed, and the performance of the new transistor is verified by silvaco TCAD software simulation. The influence mechanism of doping and dimension on the energy band and performance of the device is analyzed. The results show that the switching ratio of the device is 5 脳 10 ~ 6 at 0.5 V driving voltage, and the minimum sub-threshold swing is only 12 MV / r. In general, the device has a large switching ratio and a very steep slope of sub-threshold curve at low drive voltage, which is suitable for ultra-low power design applications.
【作者单位】： 西安电子科技大学宽禁带半导体材料与器件教育部重点实验室;
【基金】：国家自然科学基金资助项目(61376099,61434007,61504100)
【分类号】：TN386
，
本文编号：2385434
[Abstract]:Because of the asymmetry of its own structure, the traditional tunneling transistor has only one way current path, which causes many inconvenience in circuit design. In order to improve this defect, a novel high performance concave gate tunneling transistor with bidirectional current path is designed, and the performance of the new transistor is verified by silvaco TCAD software simulation. The influence mechanism of doping and dimension on the energy band and performance of the device is analyzed. The results show that the switching ratio of the device is 5 脳 10 ~ 6 at 0.5 V driving voltage, and the minimum sub-threshold swing is only 12 MV / r. In general, the device has a large switching ratio and a very steep slope of sub-threshold curve at low drive voltage, which is suitable for ultra-low power design applications.
【作者单位】： 西安电子科技大学宽禁带半导体材料与器件教育部重点实验室;
【基金】：国家自然科学基金资助项目(61376099,61434007,61504100)
【分类号】：TN386
，
本文编号：2385434
本文链接：https://www.wllwen.com/kejilunwen/dianzigongchenglunwen/2385434.html
