基于GaN的Ka波段功率放大器设计及热分析
发布时间：2018-12-19 18:44
【摘要】：本文主要研究了基于GaN材料的高频功率放大器的设计，以及基本的热分析理论，阐述了热分析在功率放大器设计过程中的必要性。功率放大器是T/R组件的核心部分，相控阵雷达的发展对T/R组件的性能要求越来越高，每组T/R模块都具有独立的接收发射功能，任何一组T/R模块的损坏都不会影响其他模块的工作，这必然将提升系统工作的稳定性。因此T/R模块本身性能就决定着整机工作性能，一方面我们希望T/R模块的性能不断提升，另一方面我们希望尽可能降低T/R模块的体积，降低成本，以使整机朝着小型化的方向发展。 T/R模块具有接收发射功能，它的组成部件有滤波器、混频器、放大器、低噪放等，本文紧紧围绕Ka波段研制设计功率放大器，鉴于材料对放大器性能的影响，研制中使用性能颇佳的GaN材料，不论在电子漂移速度方面，还是在击穿电压和禁带宽度等方面，GaN材料都表现出巨大的优势，成为设计高频段功率放大器的最佳选择。为实现小型化，我们采用单片集成技术，这一技术不但能大大降低生产成本，而且放大器的稳定性高、输出功率大。但是同时也将产生另外一个重要的问题，功率放大器在T/R模块中是最主要的热源，管芯集电结产生的热量源源不断地释放出来，这部分热量如果不能得到有效的释放控制，势必会影响T/R模块的工作以及整机性能，因此就必须对功率放大器以及T/R模块进行热分析。 本文首先设计仿真出35-37GHz工作频带的功率放大器，其输出功率大于34dBm，功率附加效率大于12%，增益高于9dB，带内增益平坦度小于1.0dB，已达到了最初的设计指标。因MMIC芯片最终需要在LTCC基板上安装来构建T/R组件，在这个过程中就要解决芯片的散热问题。本文在给出三种MMIC装配模型之后，运用ANSYS对三种装配模型依次进行了热仿真分析，从而找出最佳的散热装配模型。装配模型确定之后，影响其散热性能的主要是热通孔的布局，，以及通孔尺寸和孔间距。为进一步提高散热性能，文章对散热通孔布局不同的几种模型进行了热仿真分析，最终确定了散热性能与热通孔布局的关系。完成这些工作，就为后期MMIC流片成功实现装配提供了指导。
[Abstract]:This paper mainly studies the design of high-frequency power amplifier based on GaN material, and the basic thermal analysis theory, and expounds the necessity of thermal analysis in the design of power amplifier. the power amplifier is a core part of the T/ R component, the development of the phased array radar is higher and higher for the performance requirements of the T/ R component, each group of T/ R modules has independent receiving and transmitting functions, the damage of any group of T/ R modules does not affect the operation of other modules, This will inevitably improve the stability of the system's work. Therefore, the performance of the T/ R module determines the working performance of the whole machine. On the one hand, we hope the performance of the T/ R module is increasing, on the other hand, we want to reduce the volume of the T/ R module as much as possible, and reduce the cost, so as to make the whole machine develop in the direction of miniaturization. The T/ R module has the function of receiving and transmitting, its components are filter, mixer, amplifier, low-noise amplifier and so on. In this paper, the design power amplifier is designed around the Ka-band. In view of the influence of the material on the performance of the amplifier, the GaN material with excellent performance is developed. In terms of the speed of electron drift, or in terms of the breakdown voltage and the width of the forbidden band, the GaN material has a great advantage and becomes the best choice for designing high-band power amplifier In order to achieve the miniaturization, we adopt a single-chip integration technology, which not only can greatly reduce the production cost, but also the amplifier has high stability and output power. but at the same time there will be another important problem that the power amplifier is the main heat source in the t/ r module, the heat generated by the die collector junction is continuously released, The system is bound to influence the operation of the T/ R module and the performance of the complete machine. Therefore, the power amplifier and the T/ R module must be thermally separated In this paper, the power amplifier of 35-37GHz operating band is designed and simulated. The output power of the power amplifier is greater than 34dBm, the power additional efficiency is more than 12%, the gain is higher than 9dB, and the flatness of the band is less than 1. 0dB, and the initial setting has been achieved. The meter indicator. The MMIC chip will eventually need to be installed on the LTCC substrate to build the T/ R assembly, which will address the bulk of the chip in this process In this paper, after three kinds of MMIC assembly models are given, the thermal simulation analysis of three kinds of assembly models is carried out by using the ANSYS, so as to find out the best heat dissipation. The distribution model. After the assembly model is determined, the heat dissipation performance is mainly affected by the layout of the hot through hole, and the size of the through hole and the size of the through hole. In order to further improve the heat dissipation performance, the paper makes a thermal simulation analysis on several models with different layout of the heat dissipation through holes, and finally, the heat dissipation performance and the thermal through hole layout are determined. Relationship. Complete these tasks and provide for successful assembly of the later MMIC flow sheet
【学位授予单位】：北京理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN722.75
本文编号：2387306
[Abstract]:This paper mainly studies the design of high-frequency power amplifier based on GaN material, and the basic thermal analysis theory, and expounds the necessity of thermal analysis in the design of power amplifier. the power amplifier is a core part of the T/ R component, the development of the phased array radar is higher and higher for the performance requirements of the T/ R component, each group of T/ R modules has independent receiving and transmitting functions, the damage of any group of T/ R modules does not affect the operation of other modules, This will inevitably improve the stability of the system's work. Therefore, the performance of the T/ R module determines the working performance of the whole machine. On the one hand, we hope the performance of the T/ R module is increasing, on the other hand, we want to reduce the volume of the T/ R module as much as possible, and reduce the cost, so as to make the whole machine develop in the direction of miniaturization. The T/ R module has the function of receiving and transmitting, its components are filter, mixer, amplifier, low-noise amplifier and so on. In this paper, the design power amplifier is designed around the Ka-band. In view of the influence of the material on the performance of the amplifier, the GaN material with excellent performance is developed. In terms of the speed of electron drift, or in terms of the breakdown voltage and the width of the forbidden band, the GaN material has a great advantage and becomes the best choice for designing high-band power amplifier In order to achieve the miniaturization, we adopt a single-chip integration technology, which not only can greatly reduce the production cost, but also the amplifier has high stability and output power. but at the same time there will be another important problem that the power amplifier is the main heat source in the t/ r module, the heat generated by the die collector junction is continuously released, The system is bound to influence the operation of the T/ R module and the performance of the complete machine. Therefore, the power amplifier and the T/ R module must be thermally separated In this paper, the power amplifier of 35-37GHz operating band is designed and simulated. The output power of the power amplifier is greater than 34dBm, the power additional efficiency is more than 12%, the gain is higher than 9dB, and the flatness of the band is less than 1. 0dB, and the initial setting has been achieved. The meter indicator. The MMIC chip will eventually need to be installed on the LTCC substrate to build the T/ R assembly, which will address the bulk of the chip in this process In this paper, after three kinds of MMIC assembly models are given, the thermal simulation analysis of three kinds of assembly models is carried out by using the ANSYS, so as to find out the best heat dissipation. The distribution model. After the assembly model is determined, the heat dissipation performance is mainly affected by the layout of the hot through hole, and the size of the through hole and the size of the through hole. In order to further improve the heat dissipation performance, the paper makes a thermal simulation analysis on several models with different layout of the heat dissipation through holes, and finally, the heat dissipation performance and the thermal through hole layout are determined. Relationship. Complete these tasks and provide for successful assembly of the later MMIC flow sheet
【学位授予单位】：北京理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN722.75
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