IGBT驱动及过压保护研究
发布时间：2018-12-19 21:13
【摘要】：IGBT作为电力电子领域里的关键器件在行业内的地位不言而喻,IGBT驱动与保护也成为电力电子技术的重要发展方向。随着技术研究的不断深入,越来越多的IGBT驱动器问世,驱动与保护电路也从最初的主要由分立元件构成向芯片化、集成化转变,但是现在市面上流行的集中主流驱动芯片或驱动器仍有不少缺陷,特别是在大功率应用条件下,电路复杂,设计成本较高。限制了电力电子装置向大电压、大电流、高频率的发展。因此,对大功率IGBT的驱动与保护研究具有重要的意义。进行大功率IGBT驱动及过压保护研究过程中发现,由于IGBT应用于高频场合,IGBT过压主要发生在IGBT关断时过压,通过saber对原有的几种方案仿真并分析对比,针对原有的过压保护方案提供了一种新的基于驱动电路的过压保护方案。本文的目的是提供一种新的控制方法去优化IGBT关断时的表现。由于在IGBT关断时dtdi/会非常高,电路中的杂散电感会产生过压。本文详细的介绍了这种动态上升电压控制电路(DVRC电路),这种电路通过对电压上升斜率的抑制能够很好的控制关断过电压,从而简化了过压保护电路的体积以及制作成本。通过saber仿真软件验证本方案的可行性,合理的设定相关参数。本文基于其结构原理和仿真验证,设计了一套实验验证方案,搭建了一套有效的实验平台,在实验的过程中不断更改和优化电路结构,通过实验验证了动态上升电压控制方案(新型DVRC电路)的可行性。
[Abstract]:As a key device in power electronics field, IGBT has a self-evident position in the industry. IGBT driving and protection have also become an important development direction of power electronics technology. With the development of technology research, more and more IGBT drivers come out, and the drive and protection circuits are changed from discrete components to chip and integration. However, there are still many defects in the popular centralized mainstream drive chip or driver, especially in the high power application, the circuit is complex and the design cost is high. It limits the development of power electronic devices to high voltage, high current and high frequency. Therefore, it is of great significance to study the drive and protection of high power IGBT. During the research of high power IGBT drive and overvoltage protection, it is found that because IGBT is used in high frequency field, IGBT overvoltage mainly occurs when IGBT is turned off. Several original schemes are simulated and compared with each other by saber. A new overvoltage protection scheme based on drive circuit is proposed for the original overvoltage protection scheme. The purpose of this paper is to provide a new control method to optimize the performance of IGBT turn-off. Because dtdi/ is very high when IGBT is turned off, stray inductors in the circuit can overvoltage. In this paper, the dynamic rising voltage control circuit (DVRC) is introduced in detail. This circuit can control the off overvoltage well by restraining the voltage rise slope, thus simplifying the volume and production cost of the overvoltage protection circuit. The feasibility of this scheme is verified by saber simulation software, and relevant parameters are set reasonably. Based on its structure principle and simulation verification, this paper designs a set of experimental verification scheme, builds an effective experimental platform, and constantly changes and optimizes the circuit structure in the process of experiment. The feasibility of the dynamic rising voltage control scheme (a new type of DVRC circuit) is verified by experiments.
【学位授予单位】：华南理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN322.8
本文编号：2387468
[Abstract]:As a key device in power electronics field, IGBT has a self-evident position in the industry. IGBT driving and protection have also become an important development direction of power electronics technology. With the development of technology research, more and more IGBT drivers come out, and the drive and protection circuits are changed from discrete components to chip and integration. However, there are still many defects in the popular centralized mainstream drive chip or driver, especially in the high power application, the circuit is complex and the design cost is high. It limits the development of power electronic devices to high voltage, high current and high frequency. Therefore, it is of great significance to study the drive and protection of high power IGBT. During the research of high power IGBT drive and overvoltage protection, it is found that because IGBT is used in high frequency field, IGBT overvoltage mainly occurs when IGBT is turned off. Several original schemes are simulated and compared with each other by saber. A new overvoltage protection scheme based on drive circuit is proposed for the original overvoltage protection scheme. The purpose of this paper is to provide a new control method to optimize the performance of IGBT turn-off. Because dtdi/ is very high when IGBT is turned off, stray inductors in the circuit can overvoltage. In this paper, the dynamic rising voltage control circuit (DVRC) is introduced in detail. This circuit can control the off overvoltage well by restraining the voltage rise slope, thus simplifying the volume and production cost of the overvoltage protection circuit. The feasibility of this scheme is verified by saber simulation software, and relevant parameters are set reasonably. Based on its structure principle and simulation verification, this paper designs a set of experimental verification scheme, builds an effective experimental platform, and constantly changes and optimizes the circuit structure in the process of experiment. The feasibility of the dynamic rising voltage control scheme (a new type of DVRC circuit) is verified by experiments.
【学位授予单位】：华南理工大学
【学位级别】：硕士
【学位授予年份】：2015
【分类号】：TN322.8
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