基于双层石墨烯结构的波导型太赫兹调制器设计
发布时间：2018-12-23 19:36
【摘要】：随着太赫兹技术的迅速发展,作为太赫兹通信技术中必不可少的器件,太赫兹调制器的设计也逐渐得到重视。从最初的探索性实现太赫兹波调制开始,如今科研人员对太赫兹调制器的技术指标要求已经是高调制深度、高调制速率。本文结合石墨烯材料,设计并加工了一种基于双层石墨烯结构的波导型太赫兹调制器,具有实现高调制速率和高调制深度的潜力。石墨烯材料具有非常出色的导电性能和极高的电子迁移率,本文利用此特点设计了硅-石墨烯-绝缘层-石墨烯-硅的五层结构,绝缘层是氧化铝材料。对上下层石墨烯外加电压,经过理论计算可知,外加电压可改变石墨烯的电导率,影响其介电常数。太赫兹波以平行于石墨烯表面的方式入射,当外加电压不同时石墨烯材料的介电常数也不相同,对于太赫兹波的吸收效果也不同。一般规律为外加电压越强,则对太赫兹波的吸收效果也越强。这样在不同外加电压下,就实现了对太赫兹波的调制效果。在实验测量阶段,本文分别采用了太赫兹时域光谱系统和耿氏管系统对加工出的波导型调制器样品进行了测量,最终测量得到了最大85%的调制深度。理论分析,该设计模型理想情况下调制速率可达500MHz。
[Abstract]:With the rapid development of terahertz technology, the design of terahertz modulator, as an indispensable device in terahertz communication technology, has been paid more and more attention. Since the initial exploratory realization of terahertz wave modulation (THz), the technical requirements of THz modulator are now high modulation depth and high modulation rate. In this paper, a waveguide terahertz modulator based on bilayer graphene structure is designed and fabricated with graphene material. It has the potential to achieve high modulation rate and high modulation depth. Graphene materials have excellent electrical conductivity and high electron mobility. In this paper, the five-layer structure of silicon-graphene insulation-graphene silicon is designed. The insulating layer is alumina material. The theoretical calculation shows that the applied voltage can change the conductivity of graphene and influence its dielectric constant. The terahertz wave is incident in a manner parallel to the graphene surface. When the applied voltage is different, the dielectric constant of the graphene material is different, and the absorption effect of the terahertz wave is also different. The general rule is that the stronger the applied voltage, the stronger the absorption effect of terahertz wave. In this way, the modulation effect of terahertz wave is realized under different applied voltages. In the phase of experimental measurement, THz time-domain spectroscopy system and Gunn's tube system are used to measure the fabricated waveguide modulator samples, and the maximum modulation depth of 85% is obtained. The theoretical analysis shows that the modulation rate of the design model can reach 500 MHz under ideal conditions.
【学位授予单位】：浙江大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN761
本文编号：2390165
[Abstract]:With the rapid development of terahertz technology, the design of terahertz modulator, as an indispensable device in terahertz communication technology, has been paid more and more attention. Since the initial exploratory realization of terahertz wave modulation (THz), the technical requirements of THz modulator are now high modulation depth and high modulation rate. In this paper, a waveguide terahertz modulator based on bilayer graphene structure is designed and fabricated with graphene material. It has the potential to achieve high modulation rate and high modulation depth. Graphene materials have excellent electrical conductivity and high electron mobility. In this paper, the five-layer structure of silicon-graphene insulation-graphene silicon is designed. The insulating layer is alumina material. The theoretical calculation shows that the applied voltage can change the conductivity of graphene and influence its dielectric constant. The terahertz wave is incident in a manner parallel to the graphene surface. When the applied voltage is different, the dielectric constant of the graphene material is different, and the absorption effect of the terahertz wave is also different. The general rule is that the stronger the applied voltage, the stronger the absorption effect of terahertz wave. In this way, the modulation effect of terahertz wave is realized under different applied voltages. In the phase of experimental measurement, THz time-domain spectroscopy system and Gunn's tube system are used to measure the fabricated waveguide modulator samples, and the maximum modulation depth of 85% is obtained. The theoretical analysis shows that the modulation rate of the design model can reach 500 MHz under ideal conditions.
【学位授予单位】：浙江大学
【学位级别】：硕士
【学位授予年份】：2017
【分类号】：TN761
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